Jantxv2N3766 datasheet, PDF - EEWORLD Datasheet

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Jantxv2N3766: DescriptionPower Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size54KB，3 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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Jantxv2N3766 Overview

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin

Jantxv2N3766 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	4016681577
package instruction	TO-66, 2 PIN
Reach Compliance Code	compliant
Country Of Origin	Philippines, USA
YTEOL	7.18
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-213AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Qualified
Guideline	MIL-19500/518C
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz

Jantxv2N3766 Preview

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/518

Devices

2N3766

2N3767

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Collector Current

Total Power Dissipation

@ T

= +25

(1)

Operating & Storage Temperature Range

Symbol

CEO

CBO

EBO

stg

2N3766

6.0

2.0

4.0

2N3767

100

Units

Vdc

Adc

-65 to +200

Max.

7.0

THERMAL CHARACTERISTICS

Characteristics

Symbol

Thermal Resistance, Junction-to-Case

1) Derate linearly 143 mW/ C between T

= +25 C and T

= +200

Unit

C/W

TO-66*

(TO-213AA)

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T

= 25

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

= 100 mAdc

Collector-Emitter Cutoff Current

= 60 Vdc

= 80 Vdc

Collector-Emitter Cutoff Current

= 80 Vdc, V

= 1.5 Vdc

= 100 Vdc, V

= 1.5 Vdc

Collector-Base Cutoff Current

= 80 Vdc

= 100 Vdc

Emitter-Base Cutoff Current

= 6.0 Vdc

2N3766

2N3767

2N3766

2N3767

2N3766

2N3767

2N3766

2N3767

(BR)

CEO

500

Vdc

CEO

µAdc

CEX

µAdc

CBO

EBO

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N3766, 2N3767 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(2)

Forward-Current Transfer Ratio

= 50 mAdc, V

= 5.0 Vdc

= 500 mAdc, V

= 5.0 Vdc

= 1.0 Adc, V

= 10 Vdc

Collector-Emitter Saturation Voltage

= 1.0 Adc, I

= 0.1 Adc

= 0.5 Adc, I

= 0.05 Adc

Base-Emitter Voltage

= 1.0 Adc, V

= 10 Vdc

160

CE(sat)

BE(on)

2.5

1.0

1.5

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

= 500 mAdc, V

= 10 Vdc, f = 10 MHz

Output Capacitance

= 10 Vdc, I

= 0, 0.1 MHz

≤

1.0 MHz

h



obo

1.0

8.0

SWITCHING CHARACTERISTICS

Turn-On Time

= 30 Vdc; I

= 0.5 Adc; I

= 0.05 Adc

Turn-Off Time

= 30 Vdc; I

= 0.5 Adc; I

= I

= 0.05 Adc

0.25

2.5

µs

off

SAFE OPERATING AREA

DC Tests

= +25

C, 1 Cycle, t = 1.0 s

Test 1

= 6.25 Vdc, I

= 4.0 Adc

Test 2

= 20 Vdc, I

= 1.25 Adc

Test 3

= 50 Vdc

, I

= 150 mAdc

2N3766

= 65 Vdc, I

= 150 mAdc

2N3767

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle

≤

2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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