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M29W256GH60ZA3E

Description
Flash, 16MX16, 60ns, PBGA64, 10 X 13 MM, HALOGEN FREE AND ROHS COMPLIANT, TBGA-64
Categorystorage    storage   
File Size1MB,89 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

M29W256GH60ZA3E Overview

Flash, 16MX16, 60ns, PBGA64, 10 X 13 MM, HALOGEN FREE AND ROHS COMPLIANT, TBGA-64

M29W256GH60ZA3E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1243200484
package instructionTBGA,
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL0
Maximum access time60 ns
Spare memory width8
startup blockBOTTOM/TOP
JESD-30 codeR-PBGA-B64
length13 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals64
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Programming voltage3 V
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
typeNOR TYPE
width10 mm
256Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
M29W256GH, M29W256GL
Features
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–3.6V (I/O buffers)
– V
PPH
= 12V for fast program (optional)
• Asynchronous random/page read
– Page size: 8words or 16 bytes
– Page access: 25, 30ns
– Random access: 60ns
1
, 70, 80ns
• Fast program commands: 32-word (64-byte) write
buffer
• Enhanced buffered program commands: 256-word
• Program time
– 16µs per byte/word TYP
– Chip program time: 10s with V
PPH
and 16s with-
out V
PPH
• Memory organization
– Uniform blocks: 256 main blocks, 128-Kbytes or
64-Kwords each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM SUS-
PEND operation
– Read or program another block during an ERASE
SUSPEND operation
• Unlock bypass, block erase, chip erase, write to buf-
fer and program
– Fast buffered/batch programming
– Fast block/chip erase
• V
PP
/WP# pin protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Extended memory block
– 128-word (256-byte) memory block for perma-
nent, secure identification
– Programmed or locked at the factory or by the
customer
• Common flash interface
– 64-bit security code
• Low power consumption: Standby and automatic
mode
• JESD47H-compliant
– 100,000 minimum PROGRAM/ERASE cycles per
block
– Data retention: 20 years (TYP)
• 65nm single-level cell (SLC) process technology
• Fortified BGA, TBGA, and TSOP packages
• Green packages available
– RoHS-compliant
– Halogen-free
• Automotive device grade (6): temperature –40°C to
+85°C (automotive grade certified)
• Automotive device grade (3): temperature –40°C to
+125°C (automotive grade certified)
Note:
1. The 60ns device is available upon customer
request.
PDF: 09005aef84bd3b68
m29w_256mb.pdf - Rev. B 5/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2013 Micron Technology, Inc. All rights reserved.
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