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MT36HTF51272PZ-800XX

Description
DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, RDIMM-240
Categorystorage    storage   
File Size417KB,18 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT36HTF51272PZ-800XX Overview

DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, RDIMM-240

MT36HTF51272PZ-800XX Parametric

Parameter NameAttribute value
Objectid2027138994
Parts packaging codeDIMM
package instructionHALOGEN FREE, RDIMM-240
Contacts240
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
access modeDUAL BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N240
JESD-609 codee4
length133.35 mm
memory density38654705664 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals240
word count536870912 words
character code512000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
Maximum seat height30.5 mm
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
width30.175 mm
2Gb, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
DDR2 SDRAM RDIMM
MT36HTF25672PZ – 2GB
MT36HTF51272PZ – 4GB
MT36HTF1G72PZ – 8GB
Features
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 2GB (256 Meg x 72), 4GB (512 Meg x 72), 8GB (1 Gig x
72)
• Supports ECC error detection and correction
• V
DD
= V
DDQ
= +1.8V
• V
DDSPD
= 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Dual rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
Data Rate (MT/s)
CL = 6
800
800
CL = 5
800
667
667
CL = 4
533
533
553
553
400
CL = 3
400
400
400
400
400
t
RCD
t
RP
t
RC
Figure 1: 240-Pin RDIMM (MO-256 R/C L)
Module height: 30.0mm (1.181in)
Options
• Parity
• Operating temperature
– Commercial (0°C
T
C
+70°C)
– Industrial (–40°C
T
C
+85°C)
1
• Package
– 240-pin DIMM (halogen-free)
• Frequency/CL
2
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Notes:
Marking
P
None
I
Z
-80E
-800
-667
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
(ns)
12.5
15
15
15
15
(ns)
12.5
15
15
15
15
(ns)
55
55
55
55
55
PDF: 09005aef83d65c27
htf36c256_512_1gx72pz.pdf - Rev. E 4/14 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.
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