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HER105SP1G

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size413KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HER105SP1G Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon

HER105SP1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1329615072
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL0
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
HER101S thru HER108S
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
High Efficient Rectifiers
MECHANICAL DATA
Case:
A-405
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.2g (approximately)
A-405
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
101S 102S 103S 104S 105S 106S 107S 108S
50
35
50
100
70
100
200
200
300
300
1
30
1.3
5
150
50
20
100
- 55 to +150
- 55 to +150
75
15
1.7
400
280
400
600
420
600
800
560
800
1000
700
1000
140
210
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
en
1.0
PARAMETER
SYMBOL
HER
HER
de
HER
HER
HER
d
HER
HER
HER
UNIT
V
V
V
A
A
V
μA
ns
pF
O
T
J
=25
T
J
=125
Typical junction capacitance (Note 3)
Typical thermal resistance
Storage temperature range
tR
Maximum reverse recovery time (Note 2)
e co
Trr
Cj
T
J
R
θJA
mm
T
STG
C/W
O
O
Operating junction temperature range
C
C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1404017
No
Version: F14

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