NM1621J35 datasheet, PDF - EEWORLD Datasheet

NM1621J35: DescriptionIC,SRAM,16KX4,CMOS,DIP,22PIN,CERAMIC; Categorystorage storage; File Size524KB，10 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NM1621J35 Overview

IC,SRAM,16KX4,CMOS,DIP,22PIN,CERAMIC

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1435295567
package instruction	DIP, DIP22,.3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T22
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	22
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP22,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum standby current	0.000035 A
Minimum standby current	2 V
Maximum slew rate	0.09 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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