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CR3PM

Description
LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
File Size72KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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CR3PM Overview

LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
CR3PM
OUTLINE DRAWING
10.5 MAX
5.2
1.2
Dimensions
in mm
2.8
17
5.0
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
3.6
1.3 MAX
13.5 MIN
0.8
2.54
2.54
8.5
0.5
2.6
I
T (AV)
........................................................................... 3A
V
DRM
..............................................................400V/600V
I
GT
......................................................................... 100µA
V
iso
........................................................................ 1500V
UL Recognized: File No. E80276
123
2
Measurement point of
case temperature
3
1
1
CATHODE
2
ANODE
3
GATE
TO-220F
APPLICATION
TV sets, control of household equipment such as electric blankets, other general purpose control
applications
MAXIMUM RATINGS
(T
a
=25
°
C, unless otherwise noted)
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8
400
500
320
400
320
12
600
720
480
600
480
4.5
Unit
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Isolation voltage
Typical value
Conditions
Commercial frequency, sine half wave, 180° conduction, T
c
=103°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
4.7
3.0
70
24.5
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
V
T
a
=25°C, AC 1 minute, each terminal to case
V1.
With gate to cathode resistance R
GK
=220Ω.
Feb.1999
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