BC447, BC449, BC449A
High Voltage Transistors
NPN Silicon
Features
•
Pb−Free Packages are Available*
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COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
BC447
BC449, BC449A
Collector-Base Voltage
BC447
BC449, BC449A
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
Symbol
V
CEO
80
100
V
CBO
80
100
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
MSL: 1
NA
W
mW/°C
°C
mW
mW/°C
5.0
300
Vdc
mAdc
1
2
3
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC
44x
AYWW
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC44x = Device Code
x = 7 or 9
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC447
BC447G
BC449
BC449G
BC449A
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
5000 Units / Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
BC449AG
1
September, 2005 − Rev. 3
Publication Order Number:
BC447/D
BC447, BC449, BC449A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
BC447
BC449, BC449A
V
(BR)CEO
BC447
BC449, BC449A
V
(BR)CBO
BC447
BC449, BC449A
V
(BR)EBO
5.0
I
CBO
−
−
−
−
100
100
−
−
nAdc
80
100
−
−
−
−
Vdc
80
100
−
−
−
−
Vdc
Vdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Base −Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc) (Note 1)
h
FE
BC447, BC449
BC449A
BC447, BC449
BC449A
BC447, BC449
BC449A
V
CE(sat)
−
V
BE(sat)
−
V
BE(on)
0.55
−
−
0.76
0.7
1.2
0.85
−
Vdc
0.125
0.25
Vdc
50
120
50
100
50
60
−
−
−
−
−
−
460
220
−
−
−
−
Vdc
−
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle 2%
f
T
100
200
−
MHz
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2
BC447, BC449, BC449A
f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
300
T
J
= 25°C
200
V
CE
= −1.0 V
100
70
50
30
−1.0
−5.0 V
C, CAPACITANCE (pF)
20
C
ibo
10
8.0
6.0
C
obo
4.0
2.0
−0.1 −0.2
40
25°C
TT
J
==25°C
J
−2.0 −3.0
−5.0 −7.0 −10
−20 −30
−50 −70 −100
−0.5 −1.0 −2.0
−5.0
−10 −20
−50 −100
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Current−Gain — Bandwidth Product
Figure 2. Capacitance
300
t, TIME (ns)
200
100
70
50
30
20
10
t
s
t
f
I C , COLLECTOR CURRENT (mA)
1.0 k
700
500
V
CC
= −40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
−1.0 k
−700
−500
−300
−200
−100
−70
−50
−30
−20
−10
−1.0
t
r
t
d
@ V
BE(off)
= −0.5 V
−10
−20
−30
−50
−70
−100
−200
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8598
DUTY CYCLE
≤
10%
MPS8599
−2.0 −3.0
−5.0 −7.0 −10
−20 −30
−50 −70 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Switching Times
Figure 4. Active−Region Safe Operating Area
300
T
J
= 125°C
200
h FE , DC CURRENT GAIN
V, VOLTAGE (VOLTS)
25°C
100
70
50
−55°C
V
CE
= −5.0 V
1.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
0.8
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
30
−0.2
−0.5
−1.0 −2.0
−5.0
−10
−20
−50 −100 −200
0.5
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain
Figure 6. “ON” Voltages
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3
BC447, BC449, BC449A
PACKAGE DIMENSIONS
TO−92
(TO−226)
CASE 29−11
ISSUE AL
A
R
P
L
SEATING
PLANE
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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5
BC447/D
Microcontroller MCU
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