CMLT5088ELEADFREE datasheet, PDF

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CMLT5088ELEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, PICOMINI-6; CategoryDiscrete semiconductor The transistor; File Size458KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMLT5088ELEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, PICOMINI-6

CMLT5088ELEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-F6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN (315)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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CMLT5078E NPN/PNP

CMLT5087E PNP/PNP

CMLT5088E NPN/NPN

ENHANCED SPECIFICATION

SURFACE MOUNT SILICON

DUAL TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT5078E,

CMLT5087E, and CMLT5088E are surface mount

silicon transistors with enhanced specifications

designed for applications requiring high gain and low

noise.

MARKING CODES: CMLT5078E: L78

CMLT5087E: L87

CMLT5088E: L88

or

88

SOT-563 CASE

MAXIMUM RATINGS:

(TA=25°C)

♦

Collector-Base Voltage

♦

Collector-Emitter Voltage

♦

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

UNITS

V

mA

mW

°C

°C/W

50

5.0

100

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

TYP

SYMBOL

TEST CONDITIONS

MIN

NPN PNP

MAX

ICBO

VCB=20V

50

IEBO

♦

BVCBO

♦

BVCEO

♦

BVEBO

♦

VCE(SAT)

♦

VCE(SAT)

♦

VBE(SAT)

♦

hFE

♦

hFE

♦

hFE

♦

fT

Cob

Cib

hfe

NF

VEB=3.0V

IC=100μA

IC=1.0mA

IE=100μA

IC=10mA, IB=1.0mA

IC=100mA, IB=10mA

IC=10mA, IB=1.0mA

VCE=5.0V, IC=0.1mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=100mA

VCE=5.0V, IC=500μA, f=20MHz

VCB=5.0V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=100μA, RS=10kΩ,

f=10Hz to 15.7kHz

50

5.0

135

65

8.7

45

110

700

300

50

100

4.0

15

350

1400

3.0

430

435

430

125

150

105

7.5

50

225

700

390

380

350

75

100

400

800

900

50

UNITS

nA

V

mV

MHz

pF

dB

♦

Enhanced specification

♦

Additional Enhanced specification

♦

R5 (12-February 2014)

CMLT5088ELEADFREE Related Products

	CMLT5088ELEADFREE	CMLT5078ELEADFREE	CMLT5087ELEADFREE
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, PICOMINI-6	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PICOMINI-6	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PICOMINI-6
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Contacts	6	6	6
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50	50	50
JESD-30 code	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	2	2	2
Number of terminals	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	NPN	NPN AND PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1

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