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1N3737

Description
250 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB
CategoryDiscrete semiconductor    diode   
File Size132KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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1N3737 Overview

250 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB

1N3737 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-9
package instructionO-MUPM-H1
Contacts1
Reach Compliance Codecompliant
Is SamacsysN
applicationSOFT RECOVERY POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-205AB
JESD-30 codeO-MUPM-H1
JESD-609 codee0
Maximum non-repetitive peak forward current5000 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature190 °C
Minimum operating temperature-65 °C
Maximum output current275 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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