RN2107∼RN2109
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2107, RN2108, RN2109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1107 to RN1109
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2107
RN2108
RN2109
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2107 to 2109
RN2107
Emitter-base voltage
RN2108
RN2109
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107 to 2109
I
C
P
C*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
100
150
−55
to 150
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Total rating
Start of commercial production
1990-12
1
2014-03-01
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Training Edition
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