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KBP156GC2G

Description
Bridge Rectifier Diode, 1.5A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size215KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

KBP156GC2G Overview

Bridge Rectifier Diode, 1.5A, 800V V(RRM),

KBP156GC2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PSIP-W4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-W4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Base Number Matches1
KBP151G thru KBP157G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
KBP
MECHANICAL DATA
Case:
KBP
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Weight:
1.5 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3mS)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1.5 A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θjL
R
θjA
T
J
T
STG
KBP
151G
50
35
50
KBP
152G
100
70
100
KBP
153G
200
140
200
KBP
154G
400
280
400
1.5
50
10.3
1.1
10
500
13
40
- 55 to +150
- 55 to +150
O
KBP
155G
600
420
600
KBP
156G
800
560
800
KBP
157G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Document Number: DS_D1311018
Version: D13
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