EEWORLDEEWORLDEEWORLD

Part Number

Search

IRHNA57260SCS

Description
Power Field-Effect Transistor, 55A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size109KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRHNA57260SCS Overview

Power Field-Effect Transistor, 55A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

IRHNA57260SCS Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)380 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)55 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)220 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 91838E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA57260 100K Rads (Si)
IRHNA53260
IRHNA54260
300K Rads (Si)
600K Rads (Si)
R
DS(on)
0.043Ω
0.043Ω
0.043Ω
0.048Ω
I
D
55A
55A
55A
55A
IRHNA57260
200V, N-CHANNEL
4
#

TECHNOLOGY
c
IRHNA58260 1000K Rads (Si)
SMD-2
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
55
35
220
300
2.4
±20
380
55
30
9.2
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
01/30/03
Don't call me Doctor.
There were huge crowds of people at the talent exchange meeting. I squeezed through the crowd with three versions of my resume. One of them said I had a doctorate, one said I had a master's degree, an...
jxb01033016 Talking about work
Proteus software problem, failed to open the file
This problem occurs when opening the proteus file. What's the matter? It can be opened on a classmate's computer. Please tell me the reason and solution. Thanks....
37°男人 51mcu
[RVB2601 Creative Application Development] 5. Solve the problem that W800 sometimes cannot connect to the Internet
[i=s]This post was last edited by hehung on 2022-6-2 22:02[/i]1. IntroductionDuring the debugging process, I often encountered the situation where W800 could not connect to wifi.The specific phenomeno...
hehung XuanTie RISC-V Activity Zone
I would like to ask if the 12864 display screen is broken if the yellow piece of soldering is accidentally removed
I am a beginner in microcontrollers. When I was making a small thing, I used a 12864 display screen. When I was soldering, I accidentally soldered it upside down. When I was repairing it, I accidental...
无敌酷炫小天王 51mcu
Pulled out life
It's almost lunchtime, I hope this title won't disgust you... But compared to Knight's post, at least his title was thought of for treatment... So I have to bring someone up here. To be honest, after ...
辛昕 Talking
How does the msp430 launchpad output two independent PWMs?
The msp430 launchpad seems to have two TimerA. Does this mean that the msp430 launchpad can output two independent PWMs?If it is possible, how can I set it up? I am a novice and can only use some basi...
hxunan Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1526  2371  2650  2560  1845  31  48  54  52  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号