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SG-645STW32.0001MB3:PURESN

Description
IC,CRYSTAL OSCILLATOR,1-CHANNEL,32.0001M-39.9999M,DIP,4PIN,PLASTIC
CategoryPassive components    oscillator   
File Size377KB,2 Pages
ManufacturerSeiko Epson Corporation
Environmental Compliance
Download Datasheet Parametric View All

SG-645STW32.0001MB3:PURESN Overview

IC,CRYSTAL OSCILLATOR,1-CHANNEL,32.0001M-39.9999M,DIP,4PIN,PLASTIC

SG-645STW32.0001MB3:PURESN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid113552417
package instructionSMDIP4,.2,200
Reach Compliance Codecompliant
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of terminals4
Maximum operating frequency39.9999 MHz
Minimum operating frequency32.0001 MHz
Nominal operating frequency32.0001 MHz
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Maximum output low current16 mA
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeSMDIP4,.2,200
power supply5 V
Certification statusNot Qualified
Maximum slew rate45 mA
Nominal supply voltage5 V
surface mountYES
Terminal surfaceTin (Sn)
Crystal oscillator
Epson Toyocom
CRYSTAL OSCILLATOR
SPXO
SG - 645
/
SG - 636
series
•Frequency
range
•Supply
voltage
•Function
•Thickness
:
2.21675 MHz to 135 MHz
:
2.5 V / 3.3 V / 5.0 V
:
Output enable(OE) Standby(
ST
)
:
SG-645:1.5 mm Max.
SG-636:2.7 mm Max.
Actual size
SG-645 series
SG-636 series
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage
Temperature temperature
range
Operating
temperature
Frequency tolerance
Current consumption
Output disable current
Stand-by current
Symmetry
High output voltage
Low output voltage
Output load condition
(TTL)
Output load condition
(CMOS)
Output enable /
disable input voltage
Output rise and fall time
Oscillation start up time
Frequency aging
Symbol
Specifications
SG-636 PCE
SG-636 PTF
SG-636 PH
SG-636 SCE
2.21675 MHz
41.001 MHz
2.21675 MHz
to 41.000 MHz
to 70.000 MHz
to 40.000 MHz
5.0 V
±0.5
V
3.3 V
±0.3
V
-55
°C
to +100
°C
-20
°C
to +70
°C
C:
±100
× 10
-6
17 mA Max.
35 mA Max.
9 mA Max.
5 mA Max.
10 mA Max.
20 mA Max.
5 mA Max.
3 mA Max.
-
2
µA
Max.
-
40 % to 60 %
45 % to 55 %
45 % to 55 %
-
V
CC
-0.4 V Min.
0.4 V Max.
10 TTL Max.
50 pF Max.
20 pF Max.(≤55 MHz)
15 pF Max.(>55 MHz)
2.0 V Min.
0.8 V Max.
-
30 pF Max.
15 pF Max.
OE Terminal,
ST
Terminal (SCE)
CMOS load:20 % V
CC
to 80 % V
CC
level
TTL load:0.4 V to 2.4 V level
Time at minimum supply voltage to be 0 s
+25
°C,
V
CC
=5.0 V/3.3 V/2.5 V, First year
-20
°C
to +70
°C
No load condition
OE=GND
ST
=GND(SCE)
CMOS load:50 % V
CC
level
TTL load: 1.4 V level
I
OH
=-8 mA(PTF)/-4 mA(PH,SCE,PCE),
/-3.2 mA(PDE)
I
OL
=16 mA(PTF)/4mA(PH,SCE,PCE)
/3.2 mA(PDE)
L_CMOS
15 pF
SG-636 PDE
2.21675 MHz
to 40.000 MHz
2.5 V
±0.25
V
Store as bare product after unpacking
Remarks
f
0
V
CC
T_stg
T_use
f_tol(osc)
I
CC
I_dis
I_std
SYM
V
OH
V
OL
L_TTL
L_CMOS
V
IH
V
IL
t
r
/
t
f
t
OSC
f_aging
7 ns Max.
5 ns Max.
4 ms Max.
80 % V
CC
Min.
20 % V
CC
Max.
5 ns Max.
-
10 ms Max.
4 ms Max.
-6
±5 ×
10 / year Max.
Specifications (characteristics)
Specifications
Item
Output frequency range
Supply voltage
Storage
Temperature temperature
range
Operating
temperature
Frequency tolerance
Current consumption
Output disable current
Stand-by current
Symmetry
High output voltage
Low output voltage
Output load condition
Output enable /
disable input voltage
Output rise and fall time
Oscillation start up time
Frequency aging
Symbol
SG-636 PTG
SG-636 PHG
2.21675 MHz to 33.000 MHz
*1
4.5 V to 5.5 V
-55
°C
to +100
°C
-20
°C
to +70
°C
B:
±50 ×
10
-6
25 mA Max.
20 mA Max.
-
-
40 % to 60 %
2.4 V Min.
-
C:
±100 ×
10
-6
12 mA Max.
10 mA Max.
50
µA
Max.
-20
°C
to +70
°C
No load condition
OE=GND (PTG,PHG,PCG)
ST
=GND (SCG)
50 % V
CC
level, L_CMOS=25 pF
1.4 V level, L_CMOS=25 pF
I
OH
=-8 mA
I
OH
=-16 mA
I
OL
=8 mA
I
OL
=16 mA
OE Terminal ,
ST
Terminal
20 % V
CC
to 80 % V
CC
level, L_CMOS
25 pF
TTL load:0.4 V to 2.4 V level, L_CMOS
25 pF
t=0 at 90 % V
CC
+25
°C,
V
CC
=5.0 V/ 3.3 V, First year
SG-636 PCG
SG-636 SCG
2.7 V to 3.6 V
Store as bare product after unpacking
Remarks
f
0
V
CC
T_stg
T_use
f_tol(osc)
I
CC
I_dis
I_std
SYM
V
OH
V
OL
L_CMOS
V
IH
V
IL
t
r
/
t
f
t
OSC
f_aging
-
2.4 ns Max.
45 % to 55 %
-
-
V
CC
-0.4 V Min.
V
CC
-0.4 V Min.
-
-
0.4 V Max.
-
0.4 V Max.
25 pF Max.
2.0 V Min.
70 % V
CC
Min.
0.8 V Max.
20 % V
CC
Max.
3.4 ns Max.
4 ns Max.
-
12 ms Max.
±5 ×
10
-6
/ year Max.
*1
4.1250 MHz < f
o
< 4.4336 MHz, 8.2500 MHz < f
o
< 8.8672 MHz, 16.500 MHz < f
o
< 17.7344 MHz : Unavailable
http://www.epsontoyocom.co.jp
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