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V73CBG02808RFJG6H

Description
DRAM,
Categorystorage    storage   
File Size2MB,63 Pages
ManufacturerProMOS Technologies Inc
Environmental Compliance
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V73CBG02808RFJG6H Overview

DRAM,

V73CBG02808RFJG6H Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid145229720649
Reach Compliance Codeunknown
Country Of OriginTaiwan
ECCN codeEAR99
Date Of Intro2020-09-22
YTEOL4.95
access modeMULTI BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
interleaved burst length8
JESD-30 codeR-PBGA-B78
length10.6 mm
memory density2147483648 bit
Memory IC TypeDDR3 DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals78
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize256MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA78,9X13,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length8
Maximum standby current0.01 A
Maximum slew rate0.24 mA
Maximum supply voltage (Vsup)1.575 V
Minimum supply voltage (Vsup)1.425 V
Nominal supply voltage (Vsup)1.5 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width7.5 mm
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