Freescale Semiconductor
Technical Data
Document Number: MHW1345N
Rev. 3, 5/2006
General Purpose Linear
Amplifier Module
Features
•
34.5 dB Typical Gain @ 100 MHz
•
Silicon Bipolar Technology
•
Class A Operation
•
Typical ITO = +44 dBm @ 200 MHz
•
Unconditionally Stable Under All Load Conditions
Applications
•
Driver Amplifier in 50 Ohm Systems Requiring High Linearity
•
Instrumentation Amplifiers
•
Return Path Amplifier on CATV Systems Operating in the 10 to 200 MHz
Frequency Range
•
Possible Replacement for CA2830C
Description
•
24 Vdc Supply, 10 to 200 MHz, General Purpose Linear Amplifier Module
•
Replaced MHW1345. There are no form, fit or function changes with this
part replacement.
•
RoHS Compliant
MHW1345N
10 - 200 MHz
34.5 dB
800 mW
GENERAL PURPOSE
LINEAR AMPLIFIER MODULE
ARCHIVE INFORMATION
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
DC Supply Voltage
RF Power Input
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
CC
P
in
T
C
T
stg
Value
28
+5
- 20 to +100
- 40 to +100
Unit
Vdc
dBm
°C
°C
Table 2. Electrical Characteristics
(T
C
= 25°C, V
CC
= 24 V, 50
Ω
system unless otherwise noted)
Characteristic
Frequency Range
Gain Flatness (f = 10 - 200 MHz)
Power Gain (f = 100 MHz)
Noise Figure, Broadband (f = 200 MHz)
Power Output — 1 dB Compression
(f = 10 - 200 MHz)
Power Output — 1 dB Compression
(f = 10 - 200 MHz, V
CC
= 28 V)
Third Order Intercept (See Figure 2, f
1
= 200 MHz)
Input/Output VSWR (f = 10 - 200 MHz)
Second Harmonic Distortion
(Tone at 100 mW, f
2H
= 150 MHz)
Peak Envelope Power
(Two Tone Distortion Test — See Figure 2)
(f = 10 - 200 MHz @ - 32 dB IMD)
Supply Current
Symbol
BW
G
F
G
p
NF
P
1dB
P
1dB
ITO
VSWR
d
so
PEP
Min
10
—
33.5
—
630
1000
43
—
—
600
Typ
—
±
0.5
34.5
3.8
800
1260
44
1.5:1
- 60
800
Max
200
±1
35.5
4.5
—
—
—
2:1
- 50
—
Unit
MHz
dB
dB
dB
mW
mW
dBm
—
dB
mW
I
CC
270
310
330
mA
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MHW1345N
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
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MHW1345N
Document Number: MHW1345N
4
Rev. 3, 5/2006
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
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