512K x 36, 1M x 18
2.5V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
• 512K x 36, 1M x 18 memory configurations
• Supports high performance system speed - 200 MHz
(3.2 ns Clock-to-Data Access)
• ZBT
TM
Feature - No dead cycles between write and read
cycles
• Internally synchronized output buffer enable eliminates the
need to control
OE
• Single R/W (READ/WRITE) control pin
• Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
• 4-word burst capability (interleaved or linear)
• Individual byte write (BW
1
-
BW
4
) control (May tie active)
• Three chip enables for simple depth expansion
• 2.5V power supply (±5%)
• 2.5V I/O Supply (V
DDQ
)
• Power down controlled by ZZ input
• Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)
• Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA)
IDT71T75602
IDT71T75802
Features
The IDT71T75602/802 are 2.5V high-speed 18,874,368-bit
(18 Megabit) synchronous SRAMs. They are designed to eliminate dead
bus cycles when turning the bus around between reads and writes, or
writes and reads. Thus, they have been given the name ZBT
TM
, or Zero
Bus Turnaround.
Address and control signals are applied to the SRAM during one
clock cycle, and two cycles later the associated data cycle occurs, be it
read or write.
The IDT71T75602/802 contain data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable
CEN
pin allows operation of the IDT71T75602/802
to be suspended as long as necessary. All synchronous inputs are ignored
when (CEN) is high and the internal device registers will hold their previous
values.
There are three chip enable pins (CE
1
, CE
2
,
CE
2
) that allow the
user to deselect the device when desired. If any one of these three is not
asserted when ADV/LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
Description
Pin Description Summary
A
0
-A
19
CE
1
, CE
2
,
CE
2
OE
R/W
CEN
BW
1
,
BW
2
,
BW
3
,
BW
4
CLK
ADV/LD
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Advance burst address / Load new address
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Input
JTAG Reset (Optional)
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
N/A
N/A
N/A
N/A
Asynchronous
Synchronous
Synchronous
Static
Static
APRIL 2012
1
©2012 Integrated Device Technology, Inc.
DSC-5313/10
5313 tbl 01
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
The data bus will tri-state two cycles after the chip is deselected or a write
is initiated.
The IDT71T75602/802 have an on-chip burst counter. In the burst
mode, the IDT71T75602/802 can provide four cycles of data for a
single address presented to the SRAM. The order of the burst
sequence is defined by the
LBO
input pin. The
LBO
pin selects
between linear and interleaved burst sequence. The ADV/LD signal is
Description (cont.)
used to load a new external address (ADV/LD = LOW) or increment
the internal burst counter (ADV/LD = HIGH).
The IDT71T75602/802 SRAMs utilize a high-performance 2.5V
CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm
100pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA).
Pin Definitions
(1)
Symbol
A
0
-A
19
ADV/LD
Pin Function
Address Inputs
Advance / Load
I/O
I
I
Active
N/A
N/A
Description
Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK,
ADV/LD low,
CEN
low, and true chip enables.
ADV/LD is a synchronous input that is used to load the internal registers with new address and control when it is
sampled low at the rising edge of clock with the chip selected. When ADV/LD is low with the chip deselected,
any burst in progress is terminated. When ADV/LD is sampled high then the internal burst counter is advanced
for any burst that was in progress. The external addresses are ignored when ADV/LD is sampled high.
R/W signal is a synchronous input that identifies whether the current load cycle initiated is a Read or Write access
to the memory array. The data bus activity for the current cycle takes place two clock cycles later.
Synchronous Clock Enable Input. When
CEN
is sampled high, all other synchronous inputs, including clock are
ignored and outputs remain unchanged. The effect of
CEN
sampled high on the device outputs is as if the low
to high clock transition did not occur. For normal operation,
CEN
must be sampled low at rising edge of clock.
Synchronous byte write enables. Each 9-bit byte has its own active low byte write enable. On load write cycles
(when R/W and ADV/LD are sampled low) the appropriate byte write signal (BW
1
-BW
4
) must be valid. The byte
write signal must also be valid on each cycle of a burst write. Byte Write signals are ignored when R/
W
is sampled
high. The appropriate byte(s) of data are written into the device two cycles later.
BW
1
-BW
4
can all be tied low if
always doing write to the entire 36-bit word.
Synchronous active low chip enable.
CE
1
and
CE
2
are used with CE
2
to enable the IDT71T75602/802 (CE
1
or
CE
2
sampled high or CE
2
sampled low) and ADV/LD low at the rising edge of clock, initiates a deselect cycle. The
ZBT
TM
has a two cycle de select, i.e., the data bus will tri-state two clo ck cycles after deselect is initiated.
Synchronous active high chip enable. CE
2
is used with
CE
1
and
CE
2
to enable the chip. CE
2
has inverted polarity
but otherwise identical to
CE
1
and
CE
2
.
This is the clock input to the IDT71T75602/802. Except for
OE,
all timing references for the device are made with
respect to the rising edge of CLK.
Synchronous data input/output (I/O) pins. Both the data input path and data output path are registered and triggered
by the rising edge of CLK.
Burst order selection input. When
LBO
is high the Interleaved burst sequence is selected. When
LBO
is low the
Linear burst sequence is selected.
LBO
is a static input and it must not change during device operation.
Asynchronous output enable.
OE
must be low to read data from the 71T75602/802. Whe n
OE
is high the I/O pins
are in a high-impedance state.OE does not need to be actively controlled for read and write cycles. In normal
operation,
OE
can be tied low.
Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup.
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an internal
pullup.
Clock input of TAP controller. Each TAP event is clocked. Test inp uts are captured on rising edge of TCK, while
test outputs are d riven from the falling edge of TCK. This pin has an internal pullup.
Serial output of registers placed between TDI and TDO. This output is active depending on the state of the TAP
controller.
Optional asynchronous JTAG reset. Can be used to reset the TAP controller, but not required. JTAG reset occurs
automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used
TRST
can be left
floating. This pin has an internal pullup. Only available in BGA package.
Synchro nous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71T75602/802 to its
lowest power consumption level. Data retention is guaranteed in Sleep Mode. This pin has an internal pulldown.
2.5V core power supply.
2.5V I/O Supply.
Ground.
5313 tbl 02
R/W
CEN
Read / Write
Clock Enable
I
I
N/A
LOW
BW
1
-BW
4
Individual Byte
Write Enables
I
LOW
CE
1
,
CE
2
Chip Enables
I
LOW
CE
2
CLK
I/O
0
-I/O
31
I/O
P1
-I/O
P4
LBO
OE
Chip Enable
Clock
Data Input/Output
Linear Burst Order
Output Enable
I
I
I/O
I
I
HIGH
N/A
N/A
LOW
LOW
TMS
TDI
TCK
TDO
Test Mode Select
Test Data Input
Test Clock
Test Data Output
JTAG Reset
(Optional)
Sleep Mode
Power Supply
Power Supply
Ground
I
I
I
O
N/A
N/A
N/A
N/A
TRST
I
LOW
ZZ
V
DD
V
DDQ
V
SS
I
N/A
N/A
N/A
HIGH
N/A
N/A
N/A
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Functional Block Diagram
LBO
Address A [0:18]
CE1,
CE2,
CE2
R/W
CEN
ADV/LD
BWx
D
Clk
D
Q
Control
D
Q
512Kx36 BIT
MEMORY ARRAY
Address
Input Register
DI
DO
Q
Control Logic
Mux
Sel
D
Clk
Clock
Output Register
Q
OE
TMS
TDI
TCK
TRST
Gate
5313 drw 01
JTAG
TDO
Data I/O [0:31],
I/O P[1:4]
(optional)
LBO
Address A [0:19]
CE1,
CE2,
CE2
R/W
CEN
ADV/LD
BWx
D
Clk
D
Input Register
1Mx18 BIT
MEMORY ARRAY
D
Q
Address
Q
Control
DI
DO
Q
Control Logic
Mux
Sel
D
Clk
Clock
Output Register
Q
OE
TMS
TDI
TCK
TRST
Gate
5313 drw 01b
JTAG
TDO
Data I/O [0:15],
I/O P[1:2]
(optional)
6.42
3
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Recommended DC Operating
Conditions
Symbol
V
DD
V
DDQ
V
SS
V
IH
V
IH
V
IL
Parameter
Core Supply Voltage
I/O Supply Voltage
Ground
Input High Voltage - Inputs
Input High Voltage - I/O
Input Low Voltage
Min.
2.375
2.375
0
1.7
1.7
-0.3
(1)
Typ.
2.5
2.5
0
____
____
____
Recommended Operating
Temperature and Supply Voltage
Unit
V
V
V
V
V
V
5313 tbl 03
Max.
2.625
2.625
0
V
DD
+0.3
V
DDQ
+0.3
0.7
Grade
Commercial
Industrial
Ambient
Temperature
(1)
0° C to +70° C
-40° C to +85° C
V
SS
OV
OV
V
DD
2.5V ± 5%
2.5V ± 5%
V
DDQ
2.5V ± 5%
2.5V ± 5%
5313 tbl 05
NOTE:
1. During production testing, the case temperature equals the ambient temperature.
NOTE:
1. V
IL
(min.) = –0.8V for pulse width less than t
CYC
/2, once per cycle.
Pin Configuration — 512K x 36
CE
2
BW
4
BW
3
BW
2
BW
1
CE
2
V
DD
V
SS
CLK
R/W
CEN
OE
ADV/LD
A
18
A
6
A
7
CE
1
A
17
A
8
A
9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
I/O
P3
I/O
16
I/O
17
V
DDQ
V
SS
I/O
18
I/O
19
I/O
20
I/O
21
V
SS
V
DDQ
I/O
22
I/O
23
V
DD
(1)
V
DD
V
DD
(1)
V
SS
I/O
24
I/O
25
V
DDQ
V
SS
I/O
26
I/O
27
I/O
28
I/O
29
V
SS
V
DDQ
I/O
30
I/O
31
I/O
P4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/O
P2
I/O
15
I/O
14
V
DDQ
V
SS
I/O
13
I/O
12
I/O
11
I/O
10
V
SS
V
DDQ
I/O
9
I/O
8
V
SS
V
DD
(1)
V
DD
ZZ
I/O
7
I/O
6
V
DDQ
V
SS
I/O
5
I/O
4
I/O
3
I/O
2
V
SS
V
DDQ
I/O
1
I/O
0
I/O
P1
5313 drw 02
LBO
A
5
A
4
A
3
A
2
A
1
A
0
NC / TMS
(2)
NC / TDI
(2)
V
SS
V
DD
NC / TDO
(2)
NC / TCK
(2,3)
NOTES:
1. Pins 14, 16, and 66 do not have to be connected directly to V
DD
as long as the input voltage is
≥
V
IH
.
2. Pins 38, 39 and 43 will be pulled internally to V
DD
if not actively driven. To disable the TAP controller without interfering with
normal operation, several settings are possible. Pins 38, 39 and 43 could be tied to V
DD
or V
SS
and pin 42 should be left
unconnected. Or all JTAG inputs (TMS, TDI and TCK) pins 38, 39 and 43 could be left unconnected “NC” and the JTAG
circuit will remain disabled from power up.
3. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin TQFP package for the 36M ZBT device.
Top View
100 TQFP
6.42
4
A
10
A
11
A
12
A
13
A
14
A
15
A
16
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs
Commercial and Industrial Temperature Ranges
CE
1
CE
2
NC
NC
BW
2
BW
1
CE
2
V
DD
V
SS
CLK
R/W
CEN
OE
ADV/LD
A
19
Pin Configuration — 1Mx 18
A
18
A
8
A
9
A
6
A
7
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
V
TERM
(3,6)
V
TERM
(4,6)
V
TERM
(5,6)
Rating
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Operating Ambient
Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Commercial
-0.5 to +3.6
-0.5 to V
DD
-0.5 to V
DD
+0.5
-0.5 to V
DDQ
+0.5
0 to +70
-55 to +125
-55 to +125
2.0
50
Industrial
-0.5 to +3.6
-0.5 to V
DD
-0.5 to V
DD
+0.5
-0.5 to V
DDQ
+0.5
-40 to +85
-55 to +125
-55 to +125
2.0
50
Unit
V
V
V
V
NC
NC
NC
V
DDQ
V
SS
NC
NC
I/O
8
I/O
9
V
SS
V
DDQ
I/O
10
I/O
11
V
DD
(1)
V
DD
V
DD
(1)
V
SS
I/O
12
I/O
13
V
DDQ
V
SS
I/O
14
I/O
15
I/O
P2
NC
V
SS
V
DDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
10
NC
NC
V
DDQ
V
SS
NC
I/O
P1
I/O
7
I/O
6
V
SS
V
DDQ
I/O
5
I/O
4
V
SS
V
DD
(1)
V
DD
ZZ
I/O
3
I/O
2
V
DDQ
V
SS
I/O
1
I/O
0
NC
NC
V
SS
V
DDQ
NC
NC
NC
5313 drw 02a
T
A
(7)
T
BIAS
T
STG
P
T
I
OUT
o
C
C
C
o
o
W
mA
5313 tbl 06
,
NOTES:
1. Pins 14, 16, and 66 do not have to be connected directly to V
DD
as long as the
input voltage is
≥
V
IH
.
2. Pins 38, 39 and 43 will be pulled internally to V
DD
if not actively driven. To
disable the TAP controller without interfering with normal operation, several
settings are possible. Pins 38, 39 and 43 could be tied to V
DD
or V
SS
and pin 42
should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK) pins 38,
39 and 43 could be left unconnected “NC” and the JTAG circuit will remain
disabled from power up.
3. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin
TQFP package for the 36M ZBT device.
Top View
100 TQFP
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
DD
terminals only.
3. V
DDQ
terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary; however,
the voltage on any input or I/O pin cannot exceed V
DDQ
during power supply ramp
up.
7. During production testing, the case temperature equals T
A
.
LBO
A
5
A
4
A
3
A
2
A
1
A
0
NC / TMS
(2)
NC / TDI
(2)
V
SS
V
DD
NC / TDO
(2)
NC / TCK
(2,3)
A
11
A
12
A
13
A
14
A
15
A
16
A
17
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
100-Pin TQFP Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
5
7
Unit
pF
pF
5313 tbl 07
165 fBGA Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
7
7
Unit
pF
pF
5313 tbl 07b
119 BGA Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
7
7
Unit
pF
pF
5313 tbl 07a
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
5
Embedded System
京公网安备 11010802033920号
EEWORLD
