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2SC5840

Description
Silicon NPN epitaxial planar type
CategoryDiscrete semiconductor    The transistor   
File Size57KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SC5840 Overview

Silicon NPN epitaxial planar type

2SC5840 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionTO-220D-A1, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
Power Transistors
2SC5840
Silicon NPN epitaxial planar type
Unit: mm
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
Features
High-speed switching (t
stg
: storage time/t
f
: fall time is short)
Low collector-emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE
linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
9.9
±0.3
3.0
±0.5
4.6
±0.2
2.9
±0.2
13.7
±0.2
4.2
±0.2
Solder Dip
15.0
±0.5
φ
3.2
±0.1
1.4
±0.2
1.6
±0.2
0.8
±0.1
2.6
±0.1
0.55
±0.15
Absolute Maximum Ratings
T
C
=
25°C
1
2
2.54
±0.30
5.08
±0.50
3
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
C
=
25°C
T
a
=
25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
80
80
5
3
5
15
2
150
−55
to
+150
Unit
V
V
V
A
A
W
B
°C
°C
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5840
Internal Connection
C
E
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
h
FE1
h
FE2
h
FE3
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
80 V, I
B
=
0
V
CE
=
4 V, I
C
=
0.2 A
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
= −
0.1 A
V
CC
=
50 V
100
0.2
0.9
0.15
50
80
20
0.7
V
MHz
µs
µs
µs
280
Min
80
100
100
Typ
Max
Unit
V
µA
µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00297AED
1

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