CAT28C16AWI-90 datasheet, PDF - EEWORLD Datasheet

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CAT28C16AWI-90: DescriptionEEPROM, 2KX8, 90ns, Parallel, CMOS, PDSO24, LEAD AND HALOGEN FREE, SOIC-24; Categorystorage storage; File Size124KB，10 Pages; ManufacturerCatalyst; Websitehttp://www.catalyst-semiconductor.com/; Environmental Compliance

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CAT28C16AWI-90 Overview

EEPROM, 2KX8, 90ns, Parallel, CMOS, PDSO24, LEAD AND HALOGEN FREE, SOIC-24

CAT28C16AWI-90 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Catalyst
Parts packaging code	SOIC
package instruction	SOP, SOP24,.4
Contacts	24
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	90 ns
command user interface	NO
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G24
JESD-609 code	e3
length	15.4 mm
memory density	16384 bit
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	24
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP24,.4
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	2.65 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
switch bit	NO
width	7.5 mm
Maximum write cycle time (tWC)	5 ms
Base Number Matches	1

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CAT28C16A

16 kb CMOS Parallel

EEPROM

Description

The CAT28C16A is a fast, low power, 5V−only CMOS Parallel

EEPROM organized as 2K x 8−bits. It requires a simple interface for

in−system programming. On−chip address and data latches,

self−timed write cycle with auto−clear and V

power up/down write

protection eliminate additional timing and protection hardware. DATA

Polling signals the start and end of the self−timed write cycle.

Additionally, the CAT28C16A features hardware write protection.

The CAT28C16A is manufactured using ON Semiconductor’s

advanced CMOS floating gate technology. It is designed to endure

100,000 program/erase cycles and has a data retention of 100 years.

The device is available in JEDEC approved 24−pin DIP and SOIC or

32−pin PLCC packages.

Features

http://onsemi.com

SOIC−24

J, K, W, X SUFFIX

CASE 751BK

•

Fast Read Access Times: 90 ns, 120 ns, 200 ns

•

Low Power CMOS Dissipation:

•

– Active: 25 mA Max.

– Standby: 100

Max.

Simple Write Operation:

– On−chip Address and Data Latches

– Self−timed Write Cycle with Auto−clear

Fast Write Cycle Time: 10 ms Max

End of Write Detection: DATA Polling

Hardware Write Protection

CMOS and TTL Compatible I/O

100,000 Program/Erase Cycles

100 Year Data Retention

Commercial, Industrial and Automotive Temperature Ranges

PIN CONFIGURATION

PDIP−24

L SUFFIX

CASE 646AD

PLCC−32

N, G SUFFIX

CASE 776AK

PIN FUNCTION

Pin Name

−A

I/O

−I/O

Function

Address Inputs

Data Inputs/Outputs

Chip Enable

Output Enable

Write Enable

5 V Supply

Ground

No Connect

DIP Package (L)

SOIC Package (J, K, W, X)

I/O

PLCC Package (N, G)

ORDERING INFORMATION

I/O

See detailed ordering and shipping information in the package

dimensions section on page 10 of this data sheet.

4 3 2 1 32 31 30

TOP VIEW

14 15 16 17 18 19 20

I/O

Semiconductor Components Industries, LLC, 2009

October, 2009

−

Rev. 6

Publication Order Number:

CAT28C16A/D

CAT28C16AWI-90 Related Products

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Description	EEPROM, 2KX8, 90ns, Parallel, CMOS, PDSO24, LEAD AND HALOGEN FREE, SOIC-24	EEPROM, 2KX8, 90ns, Parallel, CMOS, PDIP24, LEAD AND HALOGEN FREE, PLASTIC, DIP-24	EEPROM, 2KX8, 120ns, Parallel, CMOS, PDIP24, LEAD AND HALOGEN FREE, PLASTIC, DIP-24	EEPROM, 2KX8, 90ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32	eeprom 16k-bit cmos para eeprom	EEPROM, 2KX8, 120ns, Parallel, CMOS, PDSO24, LEAD AND HALOGEN FREE, SOIC-24	EEPROM, 2KX8, 90ns, Parallel, CMOS, PDSO24, LEAD AND HALOGEN FREE, EIAJ, SOIC-24	EEPROM, 2KX8, 120ns, Parallel, CMOS, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	SOIC	DIP	DIP	QFJ	SOIC	SOIC	SOIC	QFJ
package instruction	SOP, SOP24,.4	DIP, DIP24,.6	DIP, DIP24,.6	QCCJ, LDCC32,.5X.6	SOP, SOP24,.45	SOP, SOP24,.4	SOP, SOP24,.45	QCCJ, LDCC32,.5X.6
Contacts	24	24	24	32	24	24	24	32
Reach Compliance Code	unknown	unknow	unknow	unknown	unknow	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	90 ns	90 ns	120 ns	90 ns	120 ns	120 ns	90 ns	120 ns
command user interface	NO	NO	NO	NO	NO	NO	NO	NO
Data polling	YES	YES	YES	YES	YES	YES	YES	YES
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G24	R-PDIP-T24	R-PDIP-T24	R-PQCC-J32	R-PDSO-G24	R-PDSO-G24	R-PDSO-G24	R-PQCC-J32
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
length	15.4 mm	31.875 mm	31.875 mm	13.97 mm	15.4 mm	15.4 mm	15.4 mm	13.97 mm
memory density	16384 bit	16384 bi	16384 bi	16384 bit	16384 bi	16384 bit	16384 bit	16384 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	24	24	24	32	24	24	24	32
word count	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words
character code	2000	2000	2000	2000	2000	2000	2000	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8	2KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	DIP	DIP	QCCJ	SOP	SOP	SOP	QCCJ
Encapsulate equivalent code	SOP24,.4	DIP24,.6	DIP24,.6	LDCC32,.5X.6	SOP24,.45	SOP24,.4	SOP24,.45	LDCC32,.5X.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	CHIP CARRIER	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	2.65 mm	5.08 mm	5.08 mm	3.55 mm	2.65 mm	2.65 mm	2.65 mm	3.55 mm
Maximum standby current	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A
Maximum slew rate	0.035 mA	0.035 mA	0.035 mA	0.035 mA	0.035 mA	0.035 mA	0.035 mA	0.035 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	MATTE TIN	TIN	Tin (Sn)	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	J BEND	GULL WING	GULL WING	GULL WING	J BEND
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	QUAD	DUAL	DUAL	DUAL	QUAD
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED	40	40	40	40	40
switch bit	NO	NO	NO	NO	NO	NO	NO	NO
width	7.5 mm	15.24 mm	15.24 mm	11.43 mm	7.5 mm	7.5 mm	7.5 mm	11.43 mm
Maximum write cycle time (tWC)	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms
Maker	Catalyst	-	-	Catalyst	Catalyst	Catalyst	Catalyst	Catalyst
Humidity sensitivity level	1	-	-	3	1	1	1	3
Base Number Matches	1	1	1	1	-	1	1	1

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