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FRM9250H2

Description
16A, 200V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size57KB,1 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

FRM9250H2 Overview

16A, 200V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

FRM9250H2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1407163654
Reach Compliance Codenot_compliant
ECCN codeEAR99
YTEOL0
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power consumption environment300 W
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)48 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
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