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ZVN2106Z

Description
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,610MA I(D),SOT-89
CategoryDiscrete semiconductor    The transistor   
File Size58KB,1 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZVN2106Z Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,610MA I(D),SOT-89

ZVN2106Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid101446768
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
ConfigurationSINGLE
Maximum drain current (ID)0.61 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
surface mountYES
Terminal surfaceMATTE TIN
Maximum time at peak reflow temperature40
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