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HSMS-8209-TR2G

Description
Mixer Diode, X Band to KU Band, Silicon, LEAD FREE, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size105KB,6 Pages
ManufacturerHP(Keysight)
Websitehttp://www.semiconductor.agilent.com/
Environmental Compliance
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HSMS-8209-TR2G Overview

Mixer Diode, X Band to KU Band, Silicon, LEAD FREE, PLASTIC PACKAGE-4

HSMS-8209-TR2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerHP(Keysight)
package instructionR-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionANODE AND CATHODE
ConfigurationCROSSOVER RING, 4 ELEMENTS
Maximum diode capacitance0.26 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandX BAND TO KU BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components4
Number of terminals4
Maximum operating frequency14 GHz
Minimum operating frequency10 GHz
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Agilent HSMS-8101, 8202, 8207,
8209 Surface Mount Microwave
Schottky Mixer Diodes
Data Sheet
Features
• Optimized for use at
10-14 GHz
• Low Capacitance
• Low Conversion Loss
Description/Applications
These low cost microwave
Schottky diodes are specifically
designed for use at X/Ku-bands
and are ideal for DBS and VSAT
downconverter applications. They
are available in SOT-23 and
SOT-143 standard package
configurations.
Note that Agilent's manufacturing
techniques assure that dice found in
pairs and quads are taken from
adjacent sites on the wafer, assur-
ing the highest degree of match.
Plastic SOT-23 Package
• Low RD
• Low Cost Surface Mount
Plastic Package
• Lead-free Option Available
Plastic SOT-143 Package
Package Lead Code
Identification
(Top View)
SINGLE
3
SERIES
3
1
#1
2
1
#2
2
Absolute Maximum Ratings , T
A
= +25°C
Symbol Parameter
P
T
P
IV
T
J
T
STG
, T
op
Total Device Dissipation
[2]
Peak Inverse Voltage
Junction Temperature
Storage and Operating
Temperature
Unit
mW
V
°C
°C
Min.
-65
Max.
75
4
+150
+150
[1]
RING
QUAD
3
4
CROSS-OVER
QUAD
3
4
1
#7
2
1
#9
2
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. Measured in an infinite heat sink at T
CASE
= 25°C. Derate linearly to
zero at 150°C per diode.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.

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