BCX71K
BCX71K
C
E
SOT-23
Mark: BK
B
PNP General Purpose Amplifier
This device is designed for applications requiring extremely
high current gain at collector currents to 300 mA. Sourced
from Process 68.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
45
45
5.0
500
-55 to +150
Units
V
V
V
mA
°C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BCX71K
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997
Fairchild Semiconductor Corporation
BCX71K
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CES
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 45 V, I
E
= 0
V
CB
= 45 V, I
E
= 0, T
A
= 100°C
45
5.0
20
20
V
V
nA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 10
µA,
V
CE
= 5.0 V
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
I
C
= 2.0 mA, V
CE
= 5.0 V
100
380
110
0.06
0.12
0.6
0.68
0.6
630
0.25
0.55
0.85
1.05
0.75
V
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
C
obo
NF
Output Capacitance
Noise Figure
V
CE
= 10 V, I
C
= 0, f = 1.0 MHz
I
C
= 0.2 mA, V
CE
= 5.0 V,
R
S
= 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
6.0
6.0
pF
dB
SWITCHING CHARACTERISTICS
t
(on)
t
(off)
Turn-On Time
Turn-Off Time
I
C
= 10 mA, I
B1
= 1.0 mA
I
B2
= 1.0 mA, V
BB
= 3.6 V,
R1 = R2 = 5.0 kΩ, R
L
= 990
Ω
150
800
ns
ns
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collect or Current
0.3
0.25
0.2
0.15
0.1
0.05
0
0.1
125
°
C
25
°
C
400
300
125 °C
β
= 10
25 °C
200
100
0
0.01
- 40 °C
- 40
°
C
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
300
BCX71K
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1.2
1
0.8
0.6
0.4
0.2
0
0.1
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β
= 10
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
V
CE
= 5V
- 40
°
C
25
°
C
125
°
C
- 40
°
C
25
°
C
125
°
C
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
300
1
10
I
C
- COLLECTOR CURRE NT (mA)
100 200
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
V
CB
= 50V
10
BV
CER
- BREAKDOWN VOLTAGE (V)
100
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
1
85
3
80
0.1
75
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
70
0.1
1
10
100
1000
RESISTANCE (k
Ω
)
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
Collector Saturation Region
4
Input and Output Capacitance
vs Reverse Voltage
100
Ta = 25°C
f = 1.0 MHz
3
2
Ic =
100 uA
50 mA
300 mA
CAPACITANCE (pF)
10
Cib
Cob
1
0
100
300
700
2000 4000
0.1
1
10
100
I
B
- BASE CURRENT (uA)
V
CE
- COLLECTOR VOLTAGE (V)
BCX71K
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
350
Power Dissipation vs
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
40
Vce = 5V
30
SOT-23
20
10
0
1
10
20
50
100 150
I
C
- COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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2
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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