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309UA120

Description
DIODE 330 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size93KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

309UA120 Overview

DIODE 330 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB, Rectifier Diode

309UA120 Parametric

Parameter NameAttribute value
MakerVishay
package instructionO-CUPM-X1
Reach Compliance Codeunknown
Other featuresHIGH SURGE CAPABILITY
applicationHIGH VOLTAGE HIGH POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-205AB
JESD-30 codeO-CUPM-X1
Maximum non-repetitive peak forward current8640 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature180 °C
Minimum operating temperature-40 °C
Maximum output current330 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Base Number Matches1
Bulletin I2032 rev. A 12/94
301U(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
Wide current range
High voltage ratings up to 2500V
High surge current capabilities
Stud cathode and stud anode version
300A
TypicalApplications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
301U(R)
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
80 to 200
330
120
520
8250
8640
340
311
800 to 2000
- 40 to 180
250
300
120
470
6050
6335
183
167
2500
- 40 to 180
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
case style
DO-205AB (DO-9)
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