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BFN26E6433HTMA1

Description
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size530KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BFN26E6433HTMA1 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SOT-23, 3 PIN

BFN26E6433HTMA1 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
Base Number Matches1
BFN24, BFN26
NPN Silicon High-Voltage Transistors
Suitable for video output stages in TV sets
and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: BFN27 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
1
2
Type
BFN24
BFN26
Maximum Ratings
Parameter
Collector-emitter voltage
BFN24
BFN26
Collector-base voltage
BFN24
BFN26
Emitter-base voltage
Collector current
Marking
FHs
FJs
1=B
1=B
Pin Configuration
2=E
2=E
Symbol
V
CEO
250
300
V
CBO
250
300
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
6
200
500
100
200
360
150
Package
SOT23
SOT23
Value
Unit
V
3=C
3=C
mA
Peak collector current,
t
p
10 ms
Base current
Peak base current
Total power dissipation-
T
S
74 °C
Junction temperature
Storage temperature
mW
°C
-65 ... 150
1
2011-12-19
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