KTC811E-GR datasheet, PDF - EEWORLD Datasheet

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KTC811E-GR: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, TES6, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size694KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC811E-GR Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, TES6, 6 PIN

KTC811E-GR Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-F6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

・A

super-minimold package houses 2 transistor.

・Excellent

temperature response between these 2 transistor.

・High

pairing property in h

・The

follwing characteristics are common for Q

, Q

KTC811E

EPITAXIAL PLANAR NPN TRANSISTOR

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

* Total Rating

SYMBOL

CBO

CEO

EBO

stg

RATING

150

200

150

-55½150

UNIT

℃

EQUIVALENT CIRCUIT (TOP VIEW)

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Noise Figure

SYMBOL

CBO

EBO

(Note)

CE(sat)

TEST CONDITION

=60V, I

=5V, I

=6V, I

=2㎃

=100㎃, I

=10㎃

=10V, I

=1㎃

=10V, I

=0, f=1㎒

=6V, I

=0.1㎃, f=1㎑, Rg=10㏀

MIN.

120

TYP.

0.1

1.0

MAX.

0.1

400

0.3

3.5

㎒

㎊

㏈

UNIT.

㎂

Note : h

Classification Y(4):120½240, GR(6):200½400

Marking

2014. 3. 31

Revision No : 2

1/3

KTC811E-GR Related Products

	KTC811E-GR	KTC811E-Y
Description	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, TES6, 6 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, TES6, 6 PIN
Maker	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Contacts	6	6
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	200	120
JESD-30 code	R-PDSO-F6	R-PDSO-F6
Number of components	2	2
Number of terminals	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz
Base Number Matches	1	1

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