SMD Super Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
CSFL101 Thru CSFL105
Reverse Voltage: 50 - 600 Volts
Forward Current: 1.0 Amp
Features
DO-213AB (Plastic Melf)
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time 35-50 nS
Built-in strain relief
Low forward voltage drop
0.022(0.55)
Max.
0.205(5.2)
0.195(4.8)
Mechanical Data
Case: DO-213AB molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.116 gram
0.105(2.67)
0.095(2.40)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Max. Average Forward Current
Max. Instantaneous Forward Current
at 1.0 A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25
C
Ta=100
C
Max. Thermal Resistance (Note 1)
Operating Junction Temperature
Storage Temperature
Symbol
V
RRM
V
DC
V
RMS
I
FSM
CSFL
101
50
50
35
CSFL
102
100
100
70
CSFL
103
200
200
140
CSFL
104
400
400
280
CSFL
105
600
600
420
Unit
V
V
V
A
30
Io
V
F
Trr
I
R
R
0.95
35
1.0
1.3
1.5
50
A
V
nS
uA
5.0
100
50
-55 to +150
-55 to +150
JA
C/W
C
C
Tj
T
STG
Note 1: Thermal resistance from junction to ambient.
MDS0210016B
Page 1
SMD Super Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
Rating and Characteristic Curves (CSFL101 Thru CSFL105)
Fig. 1 - Reverse Characteristics
1000
Tj=125 C
10
Fig.2 - Forward Characteristics
CSFL101-103
Forward current ( A )
1.0
100
Tj=75 C
CSFL104
0.1
10
CSFL105
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
1.0
Tj=25 C
0.1
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
0.001
0
0.2
0. 4
0.6
0.8
1.0
1.2
1.4
Forward Voltage (V)
Fig. 3 - Junction Capacitance
14
Fig. 4 - Non Repetitive Forward
Surge Current
Peak surge Forward Current ( A )
30
8.3mS Single Half Sine
Wave JEDEC methode
12
f=1.0MHz
Vsig=50mVp-p
Junction Capacitance (pF)
25
20
15
Tj=25 C
10
5
0
10
8
6
4
2
0
Tj=25 C
0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
Fig. 5 - Test Circuit Di
agram and Reverse Recovery Time Characteristics
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
+0.5A
Fig. 6 - Current Derating Curve
1.4
Average Forward Current ( A )
trr
|
|
|
|
|
|
|
|
1.2
1.0
0.8
0.6
0.4
0.2
0
0
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
Single Phase
Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
MDS0210016B
Page 2
Mobile and portable
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