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APTM50HM38F

Description
Power Field-Effect Transistor, 90A I(D), 500V, 0.038ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-12
CategoryDiscrete semiconductor    The transistor   
File Size294KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APTM50HM38F Overview

Power Field-Effect Transistor, 90A I(D), 500V, 0.038ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-12

APTM50HM38F Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeMODULE
package instructionMODULE-12
Contacts12
Reach Compliance Codeunknown
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)2500 mJ
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)90 A
Maximum drain current (ID)90 A
Maximum drain-source on-resistance0.038 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X12
JESD-609 codee0
Number of components4
Number of terminals12
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)694 W
Maximum pulsed drain current (IDM)360 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
APTM50HM38F
Full - Bridge
MOSFET Power Module
V
DSS
= 500V
R
DSon
= 38mW max @ Tj = 25°C
I
D
= 90A @ Tc = 25°C
Application
·
·
·
·
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
·
Power MOS 7
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
·
·
OUT1
G1
S1
VBUS
0/VBUS
G2
S2
·
Benefits
·
·
·
·
S3
G3
OUT2
S4
G4
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
500
90
67
360
±30
38
694
46
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM50HM38F– Rev 1 May, 2004
T
c
= 25°C
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