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GS8644Z18B-150I

Description
2M X 36 ZBT SRAM, 6.5 ns, PBGA165
Categorystorage   
File Size768KB,39 Pages
ManufacturerETC
Download Datasheet Parametric View All

GS8644Z18B-150I Overview

2M X 36 ZBT SRAM, 6.5 ns, PBGA165

GS8644Z18B-150I Parametric

Parameter NameAttribute value
maximum clock frequency250 MHz
Number of functions1
Number of terminals165
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage2.5 V
Minimum supply/operating voltage2.3 V
Maximum supply/operating voltage2.7 V
Processing package description17 X 15 MM, 1 MM PITCH, FPBGA-165
each_compliYes
stateActive
sub_categorySRAMs
ccess_time_max6.5 ns
i_o_typeCOMMON
jesd_30_codeR-PBGA-B165
storage density7.55E7 bi
Memory IC typeZBT SRAM
memory width36
moisture_sensitivity_levelNOT SPECIFIED
Number of digits2.10E6 words
Number of digits2M
operating modeSYNCHRONOUS
organize2MX36
Output characteristics3-STATE
Packaging MaterialsPLASTIC/EPOXY
ckage_codeBGA
ckage_equivalence_codeBGA165,11X15,40
packaging shapeRECTANGULAR
Package SizeGRID ARRAY
serial parallelPARALLEL
eak_reflow_temperature__cel_NOT SPECIFIED
wer_supplies__v_2.5/3.3
qualification_statusCOMMERCIAL
seated_height_max1.5 mm
standby_current_max0.1600 Am
standby_voltage_mi2.3 V
Maximum supply voltage0.4350 Am
surface mountYES
CraftsmanshipCMOS
Temperature levelINDUSTRIAL
terminal coatingNOT SPECIFIED
Terminal formBALL
Terminal spacing1 mm
Terminal locationBOTTOM
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
length17 mm
width15 mm
dditional_featureALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE
Product Preview
GS8644Z18(B/E)/GS8644Z36(B/E)/GS8644Z72(C)
119-, 165-, & 209-Pin BGA
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 9Mb, 18Mb, and 36Mb
devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-, 165- or 209-bump BGA package
72Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–133MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8644Z18/36/72 may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising edge triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8644Z18/36/72 is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 119-bump, 165-bump or 209-bump BGA package.
Functional Description
The GS8644Z18/36/72 is a 72Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ(x18/x36)
t
KQ(x72)
tCycle
Curr
(x18)
Curr
(x36)
Curr
(x72)
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
Curr
(x72)
-250 -225 -200
2.5 2.7 3.0
3.0 3.0 3.0
4.0 4.4 5.0
385
450
540
6.5
6.5
265
290
345
-166
3.5
3.5
6.0
-150
3.8
3.8
6.7
-133 Unit
4.0 ns
4.0 ns
7.5 ns
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
360 335 305 295 265 mA
415 385 345 325 295 mA
505 460 405 385 345 mA
6.5 6.5 7.0 7.5 8.5 ns
6.5 6.5 7.0 7.5 8.5 ns
265 265 255 240 225 mA
290 290 280 265 245 mA
345 345 335 315 300 mA
Rev: 1.03 11/2004
1/39
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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