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IMH14A

Description
General purpose (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size46KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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IMH14A Overview

General purpose (dual digital transistors)

IMH14A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-74
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G6
JESD-609 codee1
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
UMH14N / IMH14A
Transistors
General purpose (dual digital transistors)
UMH14N / IMH14A
Features
1) Two DTC144T chips in a UMT or SMT package.
External dimensions
(Unit : mm)
(4)
(3)
UMH14N
0.2
0.65
1.3
0.65
0.8
Equivalent circuit
UMH14N
(3)
(2)
(1)
(6)
IMH14A
(4)
(5)
(6)
1.25
2.1
0.15
R
1
R
1
(1)
R
1
(4) (5)
(6)
(3) (2)
R
1
(1)
0~0.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
UMH14N
UMT6
H14
TR
3000
IMH14A
SMT6
H14
T108
3000
IMH14A
0.95 0.95
1.9
2.9
(6)
0.3
(5)
(4)
1.6
2.8
0.15
1.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
UMH14N
IMH14A
0.3Min.
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
50
50
5
100
150(TOTAL)
300(TOTAL)
150
−55
to
+150
V
V
V
mA
mW
ROHM : SMT6
EIAJ : SC-74
0~0.1
Symbol
Limits
Unit
Each lead has same dimensions
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
100
32.9
Typ.
250
250
47
Max.
0.5
0.5
0.3
600
61.1
(3)
(2)
(1)
Unit
V
V
V
µA
µA
V
MHz
kΩ
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
Conditions
I
C
/I
B
=10mA/1mA
V
CE
/I
C
=5V/1mA
V
CE
=10V,
I
E
= −5mA,
f=100MHz
0.7
Rev.A
0.9
2.0
(5)
(2)
1/2

IMH14A Related Products

IMH14A UMH14N
Description General purpose (dual digital transistors) General purpose (dual digital transistors)
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor
Parts packaging code SC-74 SC-88
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e1 e2
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Copper (Sn/Cu)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 10 10
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz

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