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IR2308

Description
0.35 A HALF BRDG BASED MOSFET DRIVER, PDSO8
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size106KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Related ProductsFound3parts with similar functions to IR2308
Download Datasheet Parametric Compare View All

IR2308 Overview

0.35 A HALF BRDG BASED MOSFET DRIVER, PDSO8

IR2308 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeDIP
package instructionDIP, DIP8,.3
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
high side driverYES
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-30 codeR-PDIP-T8
JESD-609 codee0
length9.88 mm
Humidity sensitivity level2
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Nominal output peak current0.35 A
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)225
power supply15 V
Certification statusNot Qualified
Maximum seat height5.33 mm
Maximum supply voltage20 V
Minimum supply voltage10 V
Nominal supply voltage15 V
Supply voltage 1-max620 V
Mains voltage 1-minute5 V
surface mountNO
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
Disconnect time0.28 µs
connection time0.3 µs
width7.62 mm
Data Sheet No. PD60209 revC
IR2308
(S) & (PbF)
HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs
Logic and power ground +/- 5V offset.
Internal 540ns dead-time
Lower di/dt gate driver for better noise immunity
Also available LEAD_FREE
Packages
8-Lead SOIC - IR2308S
Also available
LEAD-FREE (PbF)
8-Lead PDIP
IR2308
2106//2108//2109/2304/2308 Feature Comparison
Part
2106
21064
2108
21084
2109
21094
2304
2308
Input
logic
HIN/LIN
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
Dead-Time
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
none
Internal 540ns
Programmable 0.54~5
µs
Description
Internal 540ns
The IR2308(S) are high voltage, high speed power
IN/SD
yes
Programmable 0.54~5
µs
MOSFET and IGBT drivers with dependent high and
yes
HIN/LIN
Internal 100ns
COM
low side referenced output channels. Proprietary HVIC
Internal 540ns
COM
HIN/LIN
yes
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1

IR2308 Related Products

IR2308 IR2308S IR2308SPbF
Description 0.35 A HALF BRDG BASED MOSFET DRIVER, PDSO8 0.35 A HALF BRDG BASED MOSFET DRIVER, PDSO8 0.35 A HALF BRDG BASED MOSFET DRIVER, PDSO8
Is it Rohs certified? incompatible incompatible conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code DIP SOIC SOIC
package instruction DIP, DIP8,.3 SOP, SOP8,.25 LEAD FREE, MS-012AA, SOIC-8
Contacts 8 8 8
Reach Compliance Code compli compli unknow
ECCN code EAR99 EAR99 EAR99
high side driver YES YES YES
Interface integrated circuit type HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code R-PDIP-T8 R-PDSO-G8 R-PDSO-G8
JESD-609 code e0 e0 e3
length 9.88 mm 4.9 mm 4.9 mm
Humidity sensitivity level 2 2 2
Number of functions 1 1 1
Number of terminals 8 8 8
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Nominal output peak current 0.35 A 0.35 A 0.35 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP SOP SOP
Encapsulate equivalent code DIP8,.3 SOP8,.25 SOP8,.25
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 245 260
power supply 15 V 15 V 15 V
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 5.33 mm 1.75 mm 1.75 mm
Maximum supply voltage 20 V 20 V 20 V
Minimum supply voltage 10 V 10 V 10 V
Nominal supply voltage 15 V 15 V 15 V
Supply voltage 1-max 620 V 620 V 620 V
Mains voltage 1-minute 5 V 5 V 5 V
surface mount NO YES YES
technology CMOS CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING GULL WING
Terminal pitch 2.54 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
Disconnect time 0.28 µs 0.28 µs 0.28 µs
connection time 0.3 µs 0.3 µs 0.3 µs
width 7.62 mm 3.9 mm 3.9 mm

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