PD-94072
IRFIZ48V
HEXFET
®
Power MOSFET
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Fast Switching
l
Fully Avalanche Rated
l
Optimized for SMPS Applications
Description
l
D
V
DSS
= 60V
R
DS(on)
= 12mΩ
G
S
I
D
= 39A
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
39
27
290
43
0.29
± 20
72
15
5.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
3.5
65
Units
°C/W
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1
02/12/01
IRFIZ48V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
as
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
60
–––
–––
2.0
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.064
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.6
200
157
166
4.5
7.5
1985
496
91
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
12.0 mΩ V
GS
= 10V, I
D
= 43A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 43A
25
V
DS
= 60V, V
GS
= 0V
µA
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
110
I
D
= 72A
29
nC V
DS
= 48V
36
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 30V
–––
I
D
= 72A
ns
–––
R
G
= 9.1Ω
–––
R
D
= 0.34Ω, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
mJ
I
AS
= 72A, L = 64mH
––– 780
170
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
39
––– –––
showing the
A
G
integral reverse
––– ––– 290
S
p-n junction diode.
––– ––– 2.0
V
T
J
= 25°C, I
S
= 72A, V
GS
= 0V
––– 70 100
ns
T
J
= 25°C, I
F
= 72A
––– 155 233
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Uses IRFZ48V data and test conditions.
t = 60s, f = 60Hz
Starting T
J
= 25°C, L = 64µH
R
G
= 25Ω, I
AS
= 72A. (See Figure 12)
I
SD
≤
72A, di/dt
≤
151A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRFIZ48V
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
10
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
3.0
I
D
= 72A
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
2.5
100
2.0
1.5
10
1.0
0.5
1
4
6
8
V DS = 25V
20µs PULSE WIDTH
10
12
14
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFIZ48V
4000
20
3000
Crss = Cgd
Coss = Cds + Cgd
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Cis = Cgs + Cgd, Cds SHORTED
I
D
=
72A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
15
C, Capacitance(pF)
Ciss
2000
10
1000
5
Coss
Crss
0
1
10
100
0
0
20
40
60
80
100
120
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
T
J
= 175
°
C
10us
100
100us
10
T
J
= 25
°
C
10
1ms
10ms
1
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
1
1
T
C
= 25 ° C
T
J
= 175 °C
Single Pulse
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
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IRFIZ48V
R
D
40
V
DS
V
GS
R
G
D.U.T.
+
V
DD
I
D
, Drain Current (A)
30
-
10V
20
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
P
DM
t
1
t
2
10
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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