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KA4A3Q-A

Description
PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
CategoryDiscrete semiconductor    The transistor   
File Size337KB,22 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

KA4A3Q-A Overview

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75

KA4A3Q-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)35
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
SILICON TRANSISTOR
KA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FEATURES
Compact package
Resistors built-in type
Complementary to KN4xxx
1.6 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
ORDERING INFORMATION
PART NUMBER
KA4xxx
PACKAGE
SC-75 (USM)
0.8 ± 0.1
3
0 to 0.1
2
1
0.2
0.5
+0.1
–0
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Junction Temperature
Storage Temperature
Note 1.
PART NUMBER
V
EBO
(V)
KA4A4M
KA4F4M
KA4L4M
KA4L3M
KA4L3N
KA4L3Z
KA4A3Q
KA4A4P
KA4F4N
10
10
10
10
5
5
5
5
5
A4
B4
C4
D4
E4
F4
G4
H4
X4
MARK
R
1
(kΩ)
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
10.0
47.0
47.0
R
2
(kΩ)
10.0
22.0
47.0
4.7
10.0
KA4L4L
KA4A4Z
KA4F4Z
KA4L4Z
KA4F3M
KA4F3P
KA4F3R
KA4A4L
KA4L4K
PART NUMBER
Note2
0.5
1.0
0.6
0.75 ± 0.05
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
60
50
Note1
V
V
V
A
A
W
°C
°C
2
R
1
R
2
1.6 ± 0.1
EQUIVALENT CIRCUIT
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
0.1
0.2
0.2
150
–55 to +150
Total Power Dissipation
Note3
1
MARK
R
1
(kΩ)
K4
Y4
Z4
N4
P4
Q4
R4
S4
T4
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
2.2
10.0
47.0
4.7
10.0
R
2
(kΩ)
22.0
V
EBO
(V)
15
5
5
5
10
5
5
15
25
<R>
Note 2.
PW
10 ms, Duty Cycle
50%
2
Note 3.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16495EJ5V0DS00 (5th edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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