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3SK290ZJ-UR

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4
CategoryDiscrete semiconductor    The transistor   
File Size210KB,7 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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3SK290ZJ-UR Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4

3SK290ZJ-UR Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
Shell connectionSOURCE
ConfigurationSINGLE
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)17 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

3SK290ZJ-UR Related Products

3SK290ZJ-UR 3SK290ZJ-TL 3SK290ZJ-UL 3SK290ZJ-TR
Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown
Shell connection SOURCE SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.025 A 0.025 A 0.025 A 0.025 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.03 pF 0.03 pF 0.03 pF 0.03 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Operating mode DUAL GATE, ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 17 dB 17 dB 17 dB 17 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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