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PDB-C101

Description
photodiode blue 0.31mm SQ TO-46
CategoryThe sensor   
File Size44KB,1 Pages
ManufacturerAdvanced Photonix
Download Datasheet Compare View All

PDB-C101 Overview

photodiode blue 0.31mm SQ TO-46

PHOTONIC
Silicon Photodiode, Blue Enhanced Photoconductive
Type PDB-C101
DETECTORS INC.
PACKAGE DIMENSIONS inch [mm]
Ø0.184[4.67]
Ø0.155[3.94]
C
L
45°
Ø0.210[5.33]
C
L
74°
VIEWING
ANGLE
HEADER
WINDOW CAP
(WELDED)
0.040[1.02]
WIRE
BONDS
0.150[3.81]
0.060[1.52]
0.500
[12.70]
MIN
C
L
0.100[2.54]
C
L
ANODE
Ø0.018[0.46]
CATHODE & CASE
Ø0.018[0.46]
0.042
[1.06]
PHOTODIODE
0.053[1.35]
SQUARE
Ø0.0247[Ø0.627]
ACTIVE AREA
TO-46 HERMETIC CAN PACKAGE
APPLICATIONS
Instrumentation
Industrial controls
Laser detection
Particle detection
SPECTRAL RESPONSE
RESPONSIVITY (A/W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
ACTIVE AREA = 0.31 mm
2
FEATURES
High speed
Low capacitance
Blue enhanced
Low dark current
DESCRIPTION
The
PDB-C101
is a silicon, PIN planar
diffused, blue enhanced photodiode. Ideal
for high speed photoconductive applications.
Packaged in a hermetic TO-46 metal can
with a flat window.
(TA=25
O
C unless otherwise noted)
ABSOLUTE MAXIMUM RATING
SYMBOL
PARAMETER
V
BR
T
STG
T
O
T
S
I
L
Reverse Voltage
Storage Temperature
MIN
-55
-40
MAX
100
+150
+125
+240
0.5
UNITS
V
O
O
O
C
C
C
QE
=1
00
%
Operating Temperature Range
Soldering Temperature*
Light Current
1000
1100
*1/16 inch from case for 3 secs max
WAVELENGTH (nm)
O
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25 C
SYMBOL CHARACTERISTIC TEST CONDITIONS
I
SC
I
D
R
SH
TC R
SH
C
J
l
range
l
p
V
BR
NEP
tr
Short Circuit Current
Dark Current
Shunt Resistance
RSH Temp. Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Noise Equivalent Power
Response Time
H = 100 fc, 2850 K
H = 0, V
R
= 10 V
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 V**
Spot Scan
Spot Scan
I = 10
mA
V
R
= 10 V @ Peak
RL = 1 K
W
V
R
= 50 V
unless otherwise noted)
MIN
3.2
TYP
4.6
40
MAX
150
UNITS
m
A
pA
G
W
% /
o
C
pF
.50
5
-8
15
350
950
100
125
1.5x10
-14
10
1100
nm
nm
V
W/ Hz
nS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. ** f = 1MHz
[FORM NO. 100-PDB-C101 REV B]
1200
190
300
400
500
600
700
800
900
mA
0

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