PHOTONIC
DETECTORS INC.
C
L
C
L
Silicon Photodiode Array, Photovoltaic
16 element Type PDB-V216
.062 [1.57]
ACTIVE AREA
.100 [2.54]
1
.145 [3.69]
±.005 [.13]
.992 [25.20]
.800 [20.32]
16X ANODE
3 5 7 9 11 13 15 17
.062 [1.57]
COMMON
CATHODE
C
L
.300
[7.62]
C
L
.010 [0.25] GAP
2 4 6 8 10 12 14 16 18
COMMON CATHODE
.100 [2.54]
ACTIVE AREA
C C TYP
L L
ANODE 16 PLACES
.425
[10.80]
2X .025 SQUARE
PIN HEADER
STRIP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PACKAGE DIMENSIONS INCH [mm]
.305 [7.75]
.072 [1.84]
ACTIVE AREA
.177 [4.50]
.048 [1.22]
ACTIVE AREA
PIN CONNECTIONS
PIN NO. ELEMENT NO.
1
10
4
11
3
12
6
13
5
14
8
15
7
16
10
CATHODE
9
CATHODE
ELEMENT NO.
1
2
3
4
5
6
7
8
9
PIN NO.
12
11
14
13
16
15
18
2
17
PWB PACKAGE WITH TERMINAL STRIP
ACTIVE AREA = 2.31mm
2
FEATURES
.062 inch centers
Stackable
Blue enhanced
Low cost
DESCRIPTION
The
PDB-V216
is a common cathode,
monolithic silicon PIN photodiode linear
array. Designed to be stacked end to end to
form a line of pixels. Plugable into Mill-Max
or 3M terminal receptacles.
RESPONSIVITY (A/W)
APPLICATIONS
Card reader
Scanners
Character recognition
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
V
BR
T
STG
T
O
T
S
I
L
Reverse Voltage
Storage Temperature
Operating Temperature Range
Soldering Temperature*
Light Current
-40
-20
50
+100
+75
+265
0.5
V
O
O
O
SPECTRAL RESPONSE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
1100
Hz
1200
190
300
400
500
600
700
800
900
0
C
C
C
%
00
=1
QE
mA
*1/16 inch from case for 3 secs max
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
I
SC
I
D
R
SH
TC R
SH
C
J
Short Circuit Current
Dark Current
Shunt Resistance
RSH Temp. Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Noise Equivalent Power
Response Time
H = 100 fc, 2850 K
H = 0, V
R
= 1 V
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 0 V**
Spot Scan
Spot Scan
I = 10
m
A
V
R
= 10 V @ Peak
RL = 50
Ω
V
R
= 10 V
15
350
950
30
2x10
-14
50
200
18
28
1.0
400
-8
300
MAX
5.0
UNITS
m
A
nA
M
Ω
% /
o
C
400
1100
pF
nm
nm
V
W/
nS
λ
range
λ
p
V
BR
NEP
tr
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. ** f = 1 MHz
[FORM NO. 100-PDB-V216 REV D]
Motor Drive Control（Motor Control）
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EEWORLD
