PHOTONIC
Silicon Photodiode, Blue Enhanced Solderable Chips
Photoconductive Type PDB-C603 Photovoltaic Type PDB-V603
DETECTORS INC.
PACKAGE DIMENSIONS INCH (mm)
0.097 [2.46]
0.015 [0.38]
0.097 [2.46]
1.250 [6.35]
0.097 [2.46]
1.00 [25.4]
0.057 [1.45]
0.057 [1.45]
ANODE, RED WIRE
0.057 [1.45]
ANODE, BUSS WIRE
0.016 [0.41]
0.014 [0.36]
0.016 [0.41]
0.014 [0.36]
CATHO DE, BLACK W IRE
0.016 [0.41]
0.014 [0.36]
BARE CHIP
ACTIVE AREA = 2.55 mm
2
PDB-C603-1
PDB-V603-1
30 GAGE P.V.C. WIRE
34 GAGE BUSS WIRE
PDB-C603-2
PDB-V603-2
PDB-C603-3
PDB-V603-3
FEATURES
Low cost blue enhanced planar diffused
silicon solderable photodiode. The
PDB-V603
cell is designed
Blue enhanced
for low noise, photovoltaic applications. The
PDB-C603
cell is
Photovoltaic type
designed for low capacitance, high speed, photoconductive
Photoconductive type
High quantum efficiency operation. They are available bare, PVC or buss wire leads.
0.7
0.6
0.5
0.4
0.3
0.2
0.1
DESCRIPTION:
APPLICATIONS
Optical encoder
Position sensor
Industrial controls
Instrumentation
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
V
BR
T
STG
T
O
T
S
I
L
SPECTRAL RESPONSE
RESPONSIVITY (A/W)
0
=1
0%
PARAMETER
Reverse Voltage
Storage Temperature
PDB-C603 PDB-V603
MIN
MAX
MIN
MAX
UNITS
V
O
O
O
75
25
QE
-40 +125 -40 +125
C
C
C
Operating Temperature Range -40 +100 -40 +100
Soldering Temperature
Light Current
+224
500
+224
500
mA
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS
SYMBOL CHARACTERISTIC
I
SC
I
D
R
SH
TC R
SH
C
J
Short Circuit Current
Dark Current
Shunt Resistance
R
SH
Temp. Coefficient
Junction Capacitance
(TA=25
O
C unless otherwise noted)
TEST CONDITIONS
H = 100 fc, 2850 K
H = 0, V
R
= 5 V*
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 5 V**
PDB-C603
28
32
3
18
40
-8
25
350
940
25
50
1100
5
PDB-V603
25
30
5
30
60
-8
350
350
940
5
15
4 x 2
-14
TYP
400
1100
10
MIN TYP MAX MIN TYP MAX
UNITS
m
A
nA
M
Ω
% /
o
C
pF
nm
nm
V
W/
nS
Hz
λ
range
λ
p
V
BR
N EP
tr
Spectral Application Range Spot Scan
Spectral Response - Peak Spot Scan
Breakdown Voltage
Noise Equivalent Power
Response Time
I = 10
mA
V
R
= 0 V @ Peak
RL = 1 K
Ω
V
R
= 5 V**
3 x 10
-13
TYP
12
*VR = 100 mV on Photovoltaic type
**VR = 0 V on Photovoltaic type
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice.
[FORM NO. 100-PDB-C603-V603 REV A]
1000
1100
1200
190
300
400
500
600
700
800
900
0
Embedded System
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