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PDU-V111Q

Description
photodiode UV W/QW 100.2mm TO-8
CategoryThe sensor   
File Size143KB,1 Pages
ManufacturerAdvanced Photonix
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PDU-V111Q Overview

photodiode UV W/QW 100.2mm TO-8

PHOTONIC
DETECTORS INC.
Silicon Photodiode, U.V. Enhanced Photovoltaic
Type PDU-V111-Q
Ø0.795
Ø[20.19]
Ø0.720
Ø[18.29]
Ø0.608 Ø[15.44]
0.230 [5.84]
0.165 [4.19]
QUARTZ WINDOW
CAP
WIRE
BONDS
VIEWING
ANGLE 54°
Ø0.4447
ACTIVE AREA
HEADER
PHOTODIODE CHIP
0.030[0.76]
0.200 [5.08]
UNUSED PIN
CATHODE
CASE GROUND
0.375 [9.53]
Ø0.030 [0.76]
TYP
ANODE
PACKAGE DIMENSIONS INCH (mm)
Ø0.500 [Ø12.70] PIN CIRCLE
TO-8 .795 INCH (20.19) DIA PACKAGE
ACTIVE AREA = 100.20 mm
2
FEATURES
Low noise
U.V. enhanced
High shunt resistance
Quartz window
DESCRIPTION
The
PDU-V111-Q
is a silicon, PIN planar
diffused, U.V. enhanced photodiode. Ideal
for low noise photovoltaic applications.
Packaged in a low cost TO-8 metal can
with a flat quartz window.
RESPONSIVITY (A/W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
APPLICATIONS
Spectrometers
Fluorescent analysers
U.V. meters
Colorimeters
SPECTRAL RESPONSE
%
00
=1
QE
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
V
BR
T
STG
T
O
T
S
I
L
Reverse Voltage
Storage Temperature
Operating Temperature Range
Soldering Temperature*
Light Current
-55
-40
75
+150
+125
+224
500
V
O
O
O
C
C
C
1000
1100
mA
*1/16 inch from case for 3 secs max
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
I
SC
I
D
R
SH
TC R
SH
C
J
Short Circuit Current
Dark Current
Shunt Resistance
R
SH
Temp. Coefficient
Junction Capacitance
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time
H = 100 fc, 2850 K
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 10 mV
H = 0, V
R
= 0 V**
190
.12
5
.18
10
2x10
-14
2000
V
R
= 0 V,
l
= 254 nm
I = 10
m
A
V
R
= 10 mV @ Peak
RL = 1 K
V
R
= 0 V
30
0.9
1.2
200
50
-8
10,000
MAX
333
UNITS
mA
pA
M
% /
o
C
12,000
1100
pF
nm
A/W
V
W/
nS
Hz
λ
range
R
V
BR
NEP
tr
Spectral Application Range Spot Scan
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. **f = 1 MHz
[FORM NO. 100-PDU-V111-Q REV B]
1200
190
300
400
500
600
700
800
900

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PDU-V111Q
Description photodiode UV W/QW 100.2mm TO-8
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