K7A323600M-FI20 datasheet, PDF

K7A323600M-FI20: DescriptionStandard SRAM, 1MX36, 3.1ns, CMOS, PBGA165; Categorystorage storage; File Size356KB，28 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7A323600M-FI20 Overview

Standard SRAM, 1MX36, 3.1ns, CMOS, PBGA165

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1155503143
package instruction	BGA, BGA165,11X15,40
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
YTEOL	0
Maximum access time	3.1 ns
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e0
memory density	37748736 bit
Memory IC Type	STANDARD SRAM
memory width	36
Humidity sensitivity level	3
Number of terminals	165
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Minimum standby current	3.14 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM

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