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CYD09S18V-100BBI

Description
sram sync dual port 512k x 18 3.3V ind
Categorystorage    storage   
File Size421KB,26 Pages
ManufacturerCypress Semiconductor
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CYD09S18V-100BBI Overview

sram sync dual port 512k x 18 3.3V ind

CYD09S18V-100BBI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCypress Semiconductor
Parts packaging codeBGA
package instruction17 X 17 MM, 1 MM PITCH, FBGA-256
Contacts256
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time4.7 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
I/O typeCOMMON
JESD-30 codeS-PBGA-B256
JESD-609 codee0
length17 mm
memory density9437184 bit
Memory IC TypeDUAL-PORT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.7 mm
Maximum standby current0.075 A
Minimum standby current3.14 V
Maximum slew rate0.31 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width17 mm
Base Number Matches1
CYD01S18V/CYD02S18V
CYD04S18V/CYD09S18V
FLEx18™ 3.3V 64K/128K/256K/512K x 18
Synchronous Dual-Port RAM
Features
• True dual-ported memory cells that allow simultaneous
access of the same memory location
• Synchronous pipelined operation
• Organization of 1 Mbit, 2 Mbits, 4 Mbits and 9 Mbits
devices
• Pipelined output mode allows fast operation
• 0.18-micron CMOS for optimum speed and power
• High-speed clock to data access
• 3.3V low power
— Active as low as 225 mA (typ)
— Standby as low as 55 mA (typ)
• Mailbox function for message passing
• Global master reset
• Separate byte enables on both ports
• Commercial and industrial temperature ranges
• IEEE 1149.1-compatible JTAG boundary scan
• 256-ball FBGA (1 mm pitch)
• Counter wrap-around control
— Internal mask register controls counter wrap-around
— Counter-interrupt flags to indicate wrap-around
— Memory block retransmit operation
• Counter readback on address lines
• Mask register readback on address lines
• Dual Chip Enables on both ports for easy depth
expansion
• Seamless migration to next-generation dual-port family
Functional Description
The FLEx18™ family includes 1-Mbit, 2-Mbit, 4-Mbit and
9-Mbit pipelined, synchronous, true dual-port static RAMs that
are high-speed, low-power 3.3V CMOS. Two ports are
provided, permitting independent, simultaneous access to any
location in memory. The result of writing to the same location
by more than one port at the same time is undefined. Registers
on control, address, and data lines allow for minimal set-up
and hold time.
During a Read operation, data is registered for decreased
cycle time. Each port contains a burst counter on the input
address register. After externally loading the counter with the
initial address, the counter will increment the address inter-
nally (more details to follow). The internal Write pulse width is
independent of the duration of the R/W input signal. The
internal Write pulse is self-timed to allow the shortest possible
cycle times.
A HIGH on CE0 or LOW on CE1 for one clock cycle will power
down the internal circuitry to reduce the static power
consumption. One cycle with chip enables asserted is required
to reactivate the outputs.
Additional features include: readback of burst-counter internal
address value on address lines, counter-mask registers to
control the counter wrap-around, counter interrupt (CNTINT)
flags, readback of mask register value on address lines,
retransmit functionality, interrupt flags for message passing,
JTAG for boundary scan, and asynchronous Master Reset
(MRST).
The CYD09S18V device in this family has limited features.
Please see Address Counter and Mask Register Operations
on page 5 for details.
Seamless Migration to Next Generation Dual Port Family
Cypress offers a migration path for all devices in this family to
the next-generation devices in the Dual-Port family with a
compatible footprint. Please contact Cypress Sales for more
details.
Table 1. Product Selection Guide
Density
Part Number
Max. Speed (MHz)
Max. Access Time – Clock to Data (ns)
Typical operating current (mA)
Package
1 Mbit
(64K x 18)
CYD01S18V
167
4.0
225
2 Mbit
(128K x 18)
CYD02S18V
167
4.0
225
4 Mbit
(256K x 18)
CYD04S18V
167
4.0
225
9 Mbit
(512K x 18)
CYD09S18V
133
4.7
270
256FBGA
256FBGA
256FBGA
256FBGA
(17 mm x 17 mm) (17 mm x 17 mm) (17 mm x 17 mm) (17 mm x 17 mm)
Cypress Semiconductor Corporation
Document #: 38-06077 Rev. *C
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised May 5, 2005
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CYD09S18V-100BBI Related Products

CYD09S18V-100BBI
Description sram sync dual port 512k x 18 3.3V ind
Is it lead-free? Contains lead
Is it Rohs certified? incompatible
Maker Cypress Semiconductor
Parts packaging code BGA
package instruction 17 X 17 MM, 1 MM PITCH, FBGA-256
Contacts 256
Reach Compliance Code compliant
ECCN code 3A991.B.2.A
Maximum access time 4.7 ns
Other features FLOW-THROUGH OR PIPELINED ARCHITECTURE
I/O type COMMON
JESD-30 code S-PBGA-B256
JESD-609 code e0
length 17 mm
memory density 9437184 bit
Memory IC Type DUAL-PORT SRAM
memory width 18
Humidity sensitivity level 3
Number of functions 1
Number of ports 2
Number of terminals 256
word count 524288 words
character code 512000
Operating mode SYNCHRONOUS
Maximum operating temperature 85 °C
Minimum operating temperature -40 °C
organize 512KX18
Output characteristics 3-STATE
Package body material PLASTIC/EPOXY
encapsulated code LBGA
Encapsulate equivalent code BGA256,16X16,40
Package shape SQUARE
Package form GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Celsius) 225
power supply 3.3 V
Certification status Not Qualified
Maximum seat height 1.7 mm
Maximum standby current 0.075 A
Minimum standby current 3.14 V
Maximum slew rate 0.31 mA
Maximum supply voltage (Vsup) 1.9 V
Minimum supply voltage (Vsup) 1.7 V
Nominal supply voltage (Vsup) 1.8 V
surface mount YES
technology CMOS
Temperature level INDUSTRIAL
Terminal surface TIN LEAD
Terminal form BALL
Terminal pitch 1 mm
Terminal location BOTTOM
Maximum time at peak reflow temperature 30
width 17 mm
Base Number Matches 1

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