GT60M303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
GT60M303
HIGH POWER SWITCHING APPLICATIONS
Fourth generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed
I
GBT
: t
f
= 0.25μs (TYP.)
FRD : t
rr
= 0.7μs (TYP.)
Low saturation voltage
: V
CE (sat)
= 2.1V (TYP.)
Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
Emitter−Collector
Foward Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Screw Torque
DC
1ms
DC
1ms
SYMBOL
V
CES
V
GES
I
C
I
CP
I
ECF
I
ECFP
P
C
T
j
T
stg
―
RATING
900
±25
60
120
15
120
170
150
−55~150
0.8
UNIT
V
V
A
A
W
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
Part No. (or abbreviation code)
TOSHIBA
GT60M303
Lot No.
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01
GT60M303
ELECTRICAL CHARACTERISTICS
(Ta = 25
°C
)
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−On Time
Fall Time
Turn−Off Time
Emitter-Collector Forward Voltage
Reverse Recovery Time
Thermal Resistance
Thermal Resistance
SYMBOL
I
GES
I
CES
V
GE (OFF)
V
CE (sat) (1)
V
CE (sat) (2)
C
ies
t
r
t
on
t
f
t
off
V
ECF
t
rr
R
th (j−c)
R
th (j−c)
I
EC
= 15A, V
GE
= 0
I
F
= 15A, V
GE
= 0
di / dt =
−20A
/
μs
IGBT
Diode
TEST CONDITION
V
GE
= ±25V, V
CE
= 0
V
CE
= 900V, V
GE
= 0
I
C
= 60mA, V
CE
= 5V
I
C
= 10A, V
GE
= 15V
I
C
= 60A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0, f = 1MHz
MIN
―
―
3.0
―
―
―
―
―
―
―
―
―
―
―
TYP.
―
―
―
1.6
2.1
3800
0.35
0.46
0.25
0.60
1.5
0.7
―
―
MAX
±500
1.0
6.0
2.2
2.7
―
0.60
0.75
0.40
0.70
2.0
2.5
0.74
4.0
V
μs
°C / W
°C / W
μs
UNIT
nA
mA
V
V
V
pF
2
2006-11-01
京公网安备 11010802033920号
EEWORLD
