N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 350 Volt V
DS
* R
DS(on)
=50Ω
ZVN0535A
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
350
90
600
±
20
UNIT
V
mA
mA
V
mW
°C
700
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
100
70
10
4
7
7
16
10
3-353
150
50
350
1
3
20
10
400
MAX. UNIT CONDITIONS.
V
V
nA
µ
A
µ
A
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=350 V, V
GS
=0
V
DS
=280 V, V
GS
=0V,
T=125°C
(2)
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=100mA
V
DS
=25V,I
D
=100mA
mA
Ω
Forward Transconductance(1)(2g
fs
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
C
iss
C
oss
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance C
rss
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
V
DD
≈
25V, I
D
=100mA
(
1
ZVN0535A
TYPICAL CHARACTERISTICS
I
D(On)
On-State Drain Current (mA)
800
700
600
500
400
300
200
100
0
0
10
20
30
40
50
60
70
80
90
100
3V
4V
V
GS
=
10V
8V
6V
5V
400
V
GS
=
10V
6V
5V
4V
I
D(On)
Drain Current (mA)
300
200
100
3V
0
0
4
8
12
16
20
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
20
500
I
D(On)
Drain Current (mA)
16
I
D=
250mA
400
V
DS=
25V
12
300
8
200
4
100mA
50mA
2
4
6
8
10
100
0
0
1
2
3
4
5
6
7
8
9
10
0
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
Transfer Characteristics
100
250
g
fs
-Transconductance (mS)
C-Capacitance (pF)
80
60
C
iss
40
20
0
0
10
20
30
40
50
C
oss
C
rss
200
150
100
50
0
0
100
200
V
DS=
25V
300
400
500
V
DS
-Drain Source Voltage (Volts)
I
D(on)
- Drain Current (mA)
Capacitance v drain-source voltage
Transconductance v drain current
3-354
ZVN0535A
TYPICAL CHARACTERISTICS
V
DS
=100V 200V 360V
g
fs
-Forward Transconductance (mS)
250
V
DS=
25V
10
V
GS
-Gate Source Voltage (Volts)
200
150
8
I
D=
500mA
6
100
4
2
0
0
0.4
0.8 1.2 1.6
2.0 2.4 2.8
3.2 3.6 4.0
50
0
2
4
6
8
10
V
GS
-Gate Source Voltage (Volts)
Q-Charge (nC)
Transconductance v gate-source voltage
R
DS(ON)
-Drain Source Resistance
(Ω)
Gate charge v gate-source voltage
Normalised R
DS(on)
and V
GS(th)
100
90
80
70
60
50
40
30
20
I
D=
250mA
100mA
50mA
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
e
rc
ou
-S
n
ai
Dr
e
nc
ta
is
s
Re
R
n)
(o
DS
V
GS=
10V
I
D=
0.1A
V
GS=
V
DS
I
D=
1mA
Gate T
hre
shold V
oltage
V
GS(t
h)
10
1
2
3
4
5 6 7 8 9 10
20
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
V
GS
-Gate Source Voltage
(Volts)
T
j
-Junction Temperature (C°)
On-resistance vs gate-source voltage
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-355
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