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DWEP8-06S

Description
Rectifier Diode, 1 Phase, 1 Element, Silicon, DIE-1
CategoryDiscrete semiconductor    diode   
File Size92KB,1 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

DWEP8-06S Overview

Rectifier Diode, 1 Phase, 1 Element, Silicon, DIE-1

DWEP8-06S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionDIE-1
Reach Compliance Codecompliant
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUUC-N1
Number of components1
Phase1
Number of terminals1
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Fast Recovery Epitaxial Diodes
FRED Chips
Type
T
VJM
= 150°C
V
DWEP 27 - 02
DWEP 37 - 02
DWEP 77 - 02
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
8
12
15
23
25
35
55
75
3
10
18
20
30
50
70
6
9
17
19
29
49
69
- 06
- 06
- 06
- 06
- 06
- 06
- 06
- 06
- 10
- 10
- 10
- 10
- 10
- 10
- 10
- 12
- 12
- 12
- 12
- 12
- 12
- 12
200
V
RRM
min
I
R
T
J
= 25°C
V
R
= 0.8 • V
RRM
µ
A
100
150
500
12
10
25
50
50
100
500
750
75
150
250
250
500
500
750
100
150
250
250
500
500
750
I
R
T
J
= 25°C
V
R
= V
RRM
mA
0.2
0.35
0.65
0.025
0.02
0.05
0.1
0.1
0.2
3.0
5.0
0.5
1.0
1.5
1.5
3.0
3.0
5.0
0.15
1.0
1.5
1.5
3.0
2.1
3.4
I
R
T
J
= 125°C
V
R
= 0.8 • V
RRM
mA
5
11
20
1.5
1.5
3
7
7
14
17
20
2
4
7
7
14
17
20
2
4
7
7
14
17
22
I
F(AV)M
¬
rectangular
d = 0.5
A
54
91
244
TBD
8
12
30
30
60
80
162
TBD
12
30
30
60
82
129
TBD
12
30
30
60
77
123
@
T
C
°C
85
70
70
-
115
100
85
85
70
70
70
-
100
85
85
60
70
70
-
100
85
85
60
70
70
R
thJC
(TO-247)
K/W
1.0
0.8
0.26
-
2.5
2.0
1.0
1.0
0.8
0.4
0.26
-
1.6
0.9
0.9
0.7
0.4
0.26
-
1.6
0.9
0.9
0.7
0.4
0.26
600
1000
1200
¬
Specified values refer to chip only, assembly parts are not included.
­
Specified values can only be obtained in void-free assemblies according to our assembly recommendations.
Dimensions in mm
Anode metalization Al *
Si-thick.
Type
DWEP 27 - 02
DWEP 37 - 02
DWEP 77 - 02
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
DWEP
8 - 06
12 - 06
15 - 06
23 - 06
25 - 06
35 - 06
55 - 06
75 - 06
3 - 10
10 - 10
18 - 10
20 - 10
30 - 10
50 - 10
70 - 10
6 - 12
9 - 12
17 - 12
19 - 12
29 - 12
49 - 12
69 - 12
Si-thick.
mm
0.390
A
mm
4.45
6.20
8.31
3.60
2.40
3.25
5.50
4.45
6.20
8.65
8.91
3.60
3.25
5.50
4.45
6.20
8.65
8.91
2.40
3.25
5.50
4.45
6.20
8.65
8.91
-0.1
B
mm
4.45
6.20
7.22
1.80
2.40
3.25
3.50
4.45
6.20
4.95
7.22
1.80
3.25
3.50
4.45
6.20
4.95
7.22
2.40
3.25
3.50
4.45
6.20
4.95
7.22
-0.1
C
mm
3.45
5.20
7.31
2.70
1.46
2.25
4.50
3.45
5.20
7.65
7.91
2.70
2.25
4.50
3.45
5.20
7.65
7.91
1.46
2.25
4.50
3.45
5.20
7.65
7.91
+0.1
D
mm
3.45
5.20
6.22
0.30
1.46
2.25
2.50
3.45
5.20
3.95
6.22
0.90
2.25
2.50
3.45
5.20
3.95
6.22
1.46
2.25
2.50
3.45
5.20
3.95
6.22
+0.1
E
mm
0.200
0.200
0.200
0.250
0.230
0.200
Glass
0.415
Cathode metalization Ti/Ni/Ag
* alternative on request Ti/Ni/Ag
Example: DWEP 25-06S
S = solderable topside
0.455
0.250
0.200
0.475
0.230
0.200
E
Tolerance
±0.05
+0.1
C
A
J - 12
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B

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