TC4421A/TC4422A
9A High-Speed MOSFET Drivers
Features
• High Peak Output Current: 10A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A (max.)
• Matched Fast Rise and Fall Times:
- 15 ns with 4,700 pF Load
- 135 ns with 47,000 pF Load
• Matched Short Propagation Delays: 42 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typ.)
- With Logic ‘0’ Input – 33 µA (typ.)
• Low Output Impedance: 1.2Ω (typ.)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429
and TC4421/TC4422 MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN
Package
General Description
The TC4421A/TC4422A are improved versions of the
earlier TC4421/TC4422 family of single-output
MOSFET drivers. These devices are high-current
buffer/drivers capable of driving large MOSFETs and
Insulated Gate Bipolar Transistors (IGBTs). The
TC4421A/TC4422A have matched output rise and fall
times, as well as matched leading and falling-edge
propagation delay times. The TC4421A/TC4422A
devices also have very low cross-conduction current,
reducing the overall power dissipation of the device.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1A inductive current of either polarity
being forced back into their outputs. In addition, all
terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages, in addition to a wide operating temperature
range, the TC4421A/TC4422A family of 9A MOSFET
drivers fit into most any application where high gate/line
capacitance drive is required.
Applications
•
•
•
•
•
•
Line Drivers for Extra Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
LF Initiator
Package Types
(1)
TC4421A TC4422A
8-Pin
PDIP/SOIC
V
DD
INPUT
NC
GND
1
8 V
DD
2
TC4421A
7 OUTPUT
3
TC4422A
6 OUTPUT
4
5 GND
V
DD
OUTPUT
OUTPUT
GND
V
DD
1
INPUT
2
NC
3
GND
4
8-Pin DFN
(2)
TC4421A TC4422A
8
5-Pin TO-220
Tab is
Common
to V
DD
TC4421A
TC4422A
V
DD
V
DD
TC4421A
TC4422A
7
6
5
OUTPUT OUTPUT
OUTPUT OUTPUT
GND
GND
Note 1:
Duplicate pins must both be connected for proper operation.
2:
Exposed pad of the DFN package is electrically isolated.
©
2005 Microchip Technology Inc.
INPUT
GND
V
DD
GND
OUTPUT
DS21946A-page 1
TC4421A/TC4422A
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage .................... (V
DD
+ 0.3V) to (GND – 5V)
Input Current (V
IN
> V
DD
)................................... 50 mA
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
V
OH
V
OL
R
OH
R
OL
I
PK
I
DC
V
DD
– 0.025
—
—
—
—
2
—
—
1.25
0.8
10.0
—
—
0.025
1.5
1.1
—
—
V
V
Ω
Ω
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
10V
≤
V
DD
≤
18V, T
A
= +25°C
(TC4421A/TC4422A CAT only)
(Note 2)
Duty cycle
≤
2%, t
≤
300 µsec
V
IH
V
IL
I
IN
V
IN
2.4
—
–10
–5
1.8
1.3
—
—
—
0.8
+10
V
DD
– 0.3
V
V
µA
V
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
I
REV
—
>1.5
—
A
t
R
t
F
t
D1
t
D2
I
S
V
DD
—
—
—
—
—
—
4.5
28
26
38
42
130
35
—
34
32
45
49
250
100
18
ns
ns
ns
ns
µA
µA
V
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1,
C
L
= 10,000 pF
V
IN
= 3V
V
IN
= 0V
Switching times ensured by design.
Tested during characterization, not production tested.
©
2005 Microchip Technology Inc.
DS21946A-page 3
TC4421A/TC4422A
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise noted, over operating temperature range with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
I
S
V
DD
—
—
4.5
Switching times ensured by design.
200
50
—
500
150
18
µA
µA
V
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
38
33
50.4
53
45
40
60
60
ns
ns
ns
ns
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1,
C
L
= 10,000 pF
Figure 4-1,
C
L
= 10,000 pF
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
—
—
—
0.025
2.0
1.6
V
V
Ω
Ω
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
2.4
—
–10
—
—
—
—
0.8
+10
V
V
µA
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
18V.
Parameters
Temperature Ranges
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
71
33.2
125
155
—
—
—
—
°C/W
°C/W
°C/W
°C/W
Without heat sink
Typical 4-layer board with
vias to ground plane
T
A
T
J
T
A
–40
—
–65
—
—
—
+125
+150
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
DS21946A-page 4
©
2005 Microchip Technology Inc.
TC4421A/TC4422A
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
≤
V
DD
≤
18V.
180
160
Rise Time (ns)
22,000 pF
300
250
Fall Time (ns)
5V
140
120
100
80
60
40
20
0
4
6
200
150
100
50
0
100
10V
15V
10,000 pF
1,000 pF
100 pF
8
10
12
14
16
18
1000
10000
100000
Supply Voltage (V)
Capacitive Load (pF)
FIGURE 2-1:
Voltage.
300
250
Rise Time (ns)
200
Rise Time vs. Supply
FIGURE 2-4:
Load.
55
V
DD
= 15V
Fall Time vs. Capacitive
50
5V
10V
45
Time (ns)
40
35
30
25
20
t
FALL
t
RISE
150
100
15V
50
0
100
1000
10000
100000
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
Capacitive Load (pF)
FIGURE 2-2:
Load.
180
160
140
Fall Time (ns)
120
100
80
60
40
20
0
4
6
8
1,000 pF
Rise Time vs. Capacitive
FIGURE 2-5:
Temperature.
1E-7
10
-7
Crossover Energy (A·sec)
Rise and Fall Times vs.
22,000 pF
1E-8
10
-8
10,000 pF
100 pF
1E-9
10
-9
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-3:
Voltage.
Fall Time vs. Supply
FIGURE 2-6:
Voltage.
Crossover Energy vs Supply
©
2005 Microchip Technology Inc.
DS21946A-page 5
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