J108/J109/J110/MMBFJ108
J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
1
TO-92
3
2
SuperSOT-3
Marking: I8
1. Drain 2. Source 3. Gate
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings *
T
A
=25°C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
25
-25
10
-55 ~ +150
Units
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
G
= -10µA, V
DS
= 0
V
GS
= -15V, V
DS
= 0
V
GS
= -15V, V
DS
= 0, T
A
= 100°C
V
DS
= 15V, I
D
= 10nA
108
109
110
108
109
110
108
109
110
-3.0
-2.0
-0.5
80
40
10
8.0
12
18
85
15
15
Min.
-25
-3.0
-200
-10
-6.0
-4.0
Max.
Units
V
nA
nA
V
V
V
mA
mA
mA
Ω
Ω
Ω
pF
pF
pF
Off Characteristics
Gate-Source Breakdwon Voltage
V
(BR)GSS
I
GSS
V
GS
(off)
Gate Reverse Current
Gate-Source Cutoff Voltage
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current *
V
DS
= 15V, I
GS
= 0
r
DS
(on)
Drain-Source On Resistance
V
DS
≤
0.1V, V
GS
= 0
Small Signal Characteristics
C
dg
(on)
C
sg
(off)
C
dg
(on)
C
sg
(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0MHz
V
DS
= 0, V
GS
= -10, f = 1.0MHz
V
DS
= 0, V
GS
= -10, f = 1.0MHz
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
J108/J109/J110/MMBFJ108
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
J108 - 110
625
5.0
125
357
556
*MMBFJ108
350
2.8
Units
mW
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6”
×
1.6”
×
0.06"
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
J108/J109/J110/MMBFJ108
Typical Characteristics
Common Drain-Source
Ω
r
DS
- DRAIN "ON" RESISTANCE
(Ω)
Parameter Interactions
100
50
I
DSS
@ V
DS
= 5.0V, V
GS
= 0 PULSED
r
DS
@ V
DS
= 100mV, V
GS
= 0
V
GS(off)
@ V
DS
= 5.0V, I
D
100
- DRAIN CURRENT (mA)
V
GS
= 0 V
- 2.0 V
1,000
I
DSS
-
500
80
- 1.0 V
- 3.0 V
= 3.0 nA
DRAIN CURRENT (mA)
60
40
20
- 5.0 V
r
DS
10
5
I
DSS
100
50
- 4.0 V
T
A
= 25
캜
°
C
TYP V
GS(off)
= - 5.0 V
I
0
D
0
0.4
0.8
1.2
1.6
V
DS
- DRAIN-SOURCE VOLTAGE (V)
2
_
0.1
V
GS (OFF)
10
_
_
_
0.5
1
5
10
- GATE CUTOFF VOLTAGE (V)
_
Figure 1. Common Drain-Source
Figure 2. Parameter Interactions
Common Drain-Source
100
C
ts
(C
rs
) - CAPACITANCE (pF)
- DRAIN CURRENT (mA)
f = 0.1 - 1.0 MHz
C
iss
(V
DS
= 5.0V)
Common Drain-Source
50
40
30
V
GS
= 0 V
T
A
= 25
캜
°
C
TYP V
GS(off)
= - 0.7 V
10
C
rss
(V
DS
= 0 )
20
10
0
- 0.1 V
- 0.2 V
- 0.3 V
- 0.4 V - 0.5 V
0
-8
-12
-16
V
GS
- GATE-SOURCE VOLTAGE (V)
-4
-20
I
0
D
1
2
3
4
V
DS
- DRAIN-SOURCE VOLTAGE (V)
5
Figure 3. Common Drain-Source
Figure 4. Common Drain-Source
r
DS
- NORMALIZED RESISTANCE
100
50
20
10
5
2
0
0.2
0.4
0.6
0.8
1
V
GS
/V
GS(off)
- NORMALIZED GATE-SOURCE VOLTAGE (V)
1
V
GS(off)
@ 5.0V, 10
µ
A
e
n
- NOISE VOLTAGE (nV /
√
Hz)
Normalized Drain Resistance
vs Bias Voltage
Noise Voltage vs Frequency
100
50
V
DG
= 10V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f
≥
1.0 kHz
r
DS
r
DS
=
V
GS
________
1 -
V
GS(off)
10
5
I
D
= 1.0 mA
I
D
= 10 mA
1
0.01 0.03
0.1
0.5 1 2
10
f - FREQUENCY (kHz)
100
Figure 5. Normalized Drain Resistance vs
Bias Voltage
Figure 6. Noise Voltage vs Frequency
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
J108/J109/J110/MMBFJ108
Typical Characteristics
(Continued)
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
10
t
ON
- TURN-ON TIME (ns)
ON
8
6
4
I
D
= 10 mA
V
DD
= 1.5V
V
GS(off)
= - 12V
I
D
= 30 mA
Switching Turn-On Time
vs Drain Current
50
TURN-OFF TIME (ns)
40
30
20
10
0
캜
T
A
= 25
°
C
V
GS(off)
= - 8.5V
V
GS(off)
= - 5.5V
V
GS(off)
= - 3.5V
T
A
= 25
캜
°
C
V
DD
= 1.5V
V
GS(off)
= - 12V
2
0
0
V
GS(off)
GS(off)
-2
-4
-6
-8
-10
- GATE-SOURCE CUTOFF VOLTAGE (V)
t
0
OFF
-
5
10
15
20
I
D
- DRAIN CURRENT (mA)
25
Figure 7. Switching Turn-On Time vs
Gate-Source Cutoff Voltage
Figure 8. Switching Turn-On Time vs Drain Current
Ω
r
DS
- DRAIN "ON" RESISTANCE
(Ω)
On Resistance vs Drain Current
100
50
V
GS(off)
= - 3.0V
125
캜
°
C
125
캜
°
C
V
GS
= 0
g
os
- OUTPUT CONDUCTANCE (
µ
mhos)
Output Conductance
vs Drain Current
100
V
DG
= 5.0V
10V
V
GS(off)
- 4.0V
5.0V
10V
15V
20V
15V
20V
10
5
캜
25
°
C
10
- 2.0V
5.0V
10V
15V
20V
25
캜
°
C
캜
- 55
°
C
V
GS(off)
= - 5.0V
T
A
= 25
캜
°
C
f = 1.0 kHz
- 1.0V
1
1
10
I
D
- DRAIN CURRENT (mA)
100
1
0.1
1
I
D
- DRAIN CURRENT (mA)
10
Figure 9. On Resistance vs Drain Current
Figure 10. Output Conductance vs Drain Current
g
fs
- TRANSCONDUCTANCE (mmhos)
Transconductance
vs Drain Current
T
A
= 25
캜
°
C
V
DG
= 10V
f = 1.0 kHz
T
A
= - 55
캜
°
C
T
A
= 25
캜
°
C
P
D
- P O W E R D IS S IP A T IO N (m W )
100
700
600
°
C
T
A
= 125
캜
500
T O -9 2
400
10
V
GS(off)
= - 1.0V
V
GS(off)
= - 3.0V
V
GS(off)
= - 5.0V
S u p e rS O T -3
300
200
100
1
0.1
I
D
1
- DRAIN CURRENT (mA)
10
0
0
25
50
75
100
o
125
150
TEM PERATURE ( C)
Figure 11. Transconductance vs Drain Current
Figure 12. Power Dissipation vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
J108/J109/J110/MMBFJ108
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
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