TLP627,TLP627-2,TLP627-4
TOSHIBA Photocoupler
GaAs IRED & Photo-Transistor
TLP627,TLP627-2,TLP627-4
Programmable Controllers
DC-output Module
Telecommunication
The TOSHIBA TLP627,-2 and -4 consists of a gallium arsenide infrared
emitting diode optically coupled to a darlington connected phototransistor
which has an integral base-emitter resistor to optimize switching speed and
elevated temperature characteristics.
The TLP627-2 offers two isolated channels in a eight lead plastic DIP,
while the TLP627-4 provide four isolated channels per package.
Collector-Emitter Voltage
Current Transfer Ratio
Isolation Voltage
UL Recognized
: 300V(Min)
: 1000%(Min)
: 5000Vrms(Min)
: UL1577,File No.E67349
TOSHIBA
Weight: 0.26 g (typ.)
11−5B2
Unit in mm
Made in Japan
UL Recognized
BSI Approved
E67349
7426, 7427
*1
*2
Made in Thailand
E152349
7426, 7427
*1
*2
*1
UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
Pin Configuration (top view)
TLP627
TLP627-2
TLP627-4
TOSHIBA
11−10C4
1
2
1: ANODE
2: CATHODE
3: EMITTER
4:COLLECTOR
4
3
1
2
3
4
8
7
6
5
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Weight: 0.54 g (typ.)
1,3: ANODE
2,4: CATHODE
5,7: EMITTER
6,8:COLLECTOR
1,3,5,7
: ANODE
2,4,6,8
: CATHODE
9,11,13,15 : EMITTER
10,12,14,16 :COLLECTOR
TOSHIBA
Weight: 1.1 g (typ.)
11−20A3
1
2007-10-01
TLP627,TLP627-2,TLP627-4
Absolute Maximum Ratings
(Ta=25°C)
Rating
Characteristics
Forward Current
Forward Current Derating
Pulse Forward Current
LED
Power Dissipation
Power Dissipation Derating (Ta≥25°C,1 Circuit)
Reverse Voltage
Junction Temperature
Collector-Emitter Voltage
Emitter -Collector Voltage
Detector
Collector Current
Collector Power Dissipation
Collector Power Dissipation Derating
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (10s)
Total Package Power Dissipation
Total Package Power Dissipation Derating
Isolation Voltage
(AC,1min. , R.H.≤60%)
(Ta≥25°C,1 Circuit)
(Note1)
(1 Circuit)
(Ta≥25°C,1 Circuit)
(1 Circuit)
Symbol
TLP627
I
F
∆I
F
/°C
I
FP
P
D
∆
P
D
/°C
V
R
Tj
V
CEO
V
ECO
I
C
P
C
∆
P
c
/°C
T
j
T
opr
T
stg
T
sold
P
T
∆
P
T
/°C
BV
S
150(*300)
-1.5(*-3.5)
125
−55~100
−55~125
260(10sec)
250(*320)
-2.5(*-3.2)
5000
150
-1.5
60
−0.7(Ta≥39°C)
TLP627-2
TLP627-4
50
−0.5(Ta≥25°C)
Unit
mA
mA /°C
A
mW
mW /°C
V
°C
V
V
mA
100
-1.0
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
1(100μs pulse,100pps)
100
-1.0
5
125
300
0.3
150
70
-0.7
*IF=20mA Max
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note1)Device considered a two terminal device : LED side pins Shorted together and
DETECTOR side pins shorted
together.
Recommended Operating Conditions
Characteristics
Supply Voltage
Forward Current
Collector Current
Operating Temperature
Symbol
V
CC
I
F
I
C
T
opr
Min.
—
—
—
−25
Typ.
—
16
—
—
Max.
200
25
120
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP627,TLP627-2,TLP627-4
Individual Electrical Characteristics
(Ta=25°C)
Characteristics
Forward Voltage
LED
Reverse Current
Capacitance
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Detector
Breakdown Voltage
Collector Dark Current
Capacitance Collector
to Emitter
Symbol
V
F
I
R
C
T
V
(BR)CEO
V
(BR)ECO
I
CEO
C
CE
I
F
= 10 mA
V
R
= 5 V
V=0,
f=1MHz
Test Condition
Min.
1.0
—
—
300
0.3
—
—
—
Typ.
1.15
—
30
—
—
10
—
10
Max.
1.3
10
—
—
—
200
20
—
Unit
V
μA
pF
V
V
nA
μA
pF
IC = 0.1mA
IE = 0.1mA
V
CE
= 200V
V
CE
= 200V , Ta = 85°C
V=0 , f=1MHz
Coupled Electrical Characteristics
(Ta=25°C)
Characteristics
Current Transfer Ratio
Saturated CTR
Collector-Emitter
Saturation Voltage
Symbol
I
C
/I
F
I
C
/I
F
(sat)
V
CE
(sat)
Test Condition
I
F
=1mA , V
CE
=1V
I
F
=10mA , V
CE
=1V
I
C
=10mA , I
F
=1mA
I
C
=100mA , I
F
=10mA
Min.
1000
500
—
0.3
Typ.
4000
—
—
—
Max.
—
—
1.0
1.2
Unit
%
%
V
Isolation Electrical Characteristics
(Ta=25°C)
Characteristics
Capacitance Input to Output
Isolation Resistance
Symbol
C
S
R
S
Test Condition
V
S
=0 , f=1MHz
V
S
=500V , R.H.≤60%
AC, 1minute
Isolation
Voltage
BVs
AC, 1second, in oil
DC, 1 minute, in oil
Min.
—
5×10
10
Typ.
0.8
10
14
Max.
—
—
—
—
—
Unit
pF
Ω
Vrms
Vdc
5000
—
—
—
10000
10000
3
2007-10-01
Microcontroller MCU
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