DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5011
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
• High Gain Bandwidth Product (f
T
= 6.5 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
• 4-pin super minimold Package
ORDERING INFORMATION
Part Number
2SC5011
2SC5011-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3
100
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10515EJ01V0DS (1st edition)
(Previous No. P10399EJ2V0DS00)
Date Published August 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1993 , 2004
2SC5011
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 10 V, I
C
= 20 mA
−
−
50
−
−
120
1.0
1.0
250
µ
A
µ
A
−
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
V
CB
= 10 V, I
E
= 0 mA, f = 1.0 MHz
−
11
−
−
6.5
13
1.1
0.5
–
−
2.0
0.9
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
EB
R26
50 to 100
FB
R27
80 to 160
GB
R28
125 to 250
2
Data Sheet PU10515EJ01V0DS
2SC5011
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
f = 1 MHz
2.0
1.0
0.5
250
Total Power Dissipation P
tot
(mW)
Free Air
200
150
100
50
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage V
CB
(V)
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 10 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
I
B
=
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
20
µ
A
Collector Current I
C
(mA)
40
20
30
20
10
10
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
0
5
10
15
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
V
CE
= 10 V
f = 1 GHz
V
CE
= 10 V
DC Current Gain h
FE
200
100
5
50
20
10
1
5
10
50
100
Collector Current I
C
(mA)
0
1
5
10
50
100
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10515EJ01V0DS
3
2SC5011
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
Maximum Available Gain MAG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
50
20
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 10 V
f = 1 GHz
V
CE
= 10 V
f = 20 mA
40
30
10
20
MAG
10
|S
21e
|
2
0
0.1
0.5
1.0
5.0
10
0
1
5
10
50
100
Frequency f (GHz)
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
5
V
CE
= 10 V
f = 1 GHz
4
Noise Figure NF (dB)
3
2
1
0
1
5
10
50
100
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10515EJ01V0DS
2SC5011
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.2
1.25±0.1
0.3
+0.1
–0.05
0.3
+0.1
–0.05
0.65
4
0.15
+0.1
–0.05
0.3
+0.1
–0.05
0.65
1.30
2
0.65
2.0±0.2
1.25
0.60
0.9±0.1
0.3
0.4
+0.1
–0.05
1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
0 to 0.1
3
Data Sheet PU10515EJ01V0DS
R27
5
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