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CXK5863AP-25

Description
8192 word x 8-bit High Speed CMOS Static RAM
Categorystorage    storage   
File Size293KB,7 Pages
ManufacturerSONY
Websitehttp://www.sony.co.jp
Download Datasheet Parametric Compare View All

CXK5863AP-25 Overview

8192 word x 8-bit High Speed CMOS Static RAM

CXK5863AP-25 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDIP
package instructionDIP, DIP28,.3
Contacts28
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length35.1 mm
memory density65536 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height4.4 mm
Maximum standby current0.001 A
Minimum standby current4.5 V
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
Base Number Matches1

CXK5863AP-25 Related Products

CXK5863AP-25 CXK5863AJ-20 CXK5863AJ CXK5863AP-20 CXK5863AP CXK5863 CXK5863AJ-30 CXK5863AP-30 CXK5863AJ-25
Description 8192 word x 8-bit High Speed CMOS Static RAM 8192 word x 8-bit High Speed CMOS Static RAM 8192 word x 8-bit High Speed CMOS Static RAM 8192 word x 8-bit High Speed CMOS Static RAM 8192 word x 8-bit High Speed CMOS Static RAM 8192 word x 8-bit High Speed CMOS Static RAM 8192 word x 8-bit High Speed CMOS Static RAM 8192 word x 8-bit High Speed CMOS Static RAM 8192 word x 8-bit High Speed CMOS Static RAM
Is it lead-free? Contains lead Contains lead - Contains lead - - Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible - incompatible - - incompatible incompatible incompatible
Parts packaging code DIP SOJ - DIP - - SOJ DIP SOJ
package instruction DIP, DIP28,.3 SOJ, SOJ28,.34 - DIP, DIP28,.3 - - SOJ, SOJ28,.34 DIP, DIP28,.3 SOJ, SOJ28,.34
Contacts 28 28 - 28 - - 28 28 28
Reach Compliance Code unknow unknow - unknow - - unknow unknow unknow
ECCN code EAR99 EAR99 - EAR99 - - EAR99 EAR99 EAR99
Maximum access time 25 ns 20 ns - 20 ns - - 30 ns 30 ns 25 ns
I/O type COMMON COMMON - COMMON - - COMMON COMMON COMMON
JESD-30 code R-PDIP-T28 R-PDSO-J28 - R-PDIP-T28 - - R-PDSO-J28 R-PDIP-T28 R-PDSO-J28
JESD-609 code e0 e0 - e0 - - e0 e0 e0
length 35.1 mm 18.42 mm - 35.1 mm - - 18.42 mm 35.1 mm 18.42 mm
memory density 65536 bi 65536 bi - 65536 bi - - 65536 bi 65536 bi 65536 bi
Memory IC Type STANDARD SRAM STANDARD SRAM - STANDARD SRAM - - STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 - 8 - - 8 8 8
Number of functions 1 1 - 1 - - 1 1 1
Number of ports 1 1 - 1 - - 1 1 1
Number of terminals 28 28 - 28 - - 28 28 28
word count 8192 words 8192 words - 8192 words - - 8192 words 8192 words 8192 words
character code 8000 8000 - 8000 - - 8000 8000 8000
Operating mode ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS - - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C - 70 °C - - 70 °C 70 °C 70 °C
organize 8KX8 8KX8 - 8KX8 - - 8KX8 8KX8 8KX8
Output characteristics 3-STATE 3-STATE - 3-STATE - - 3-STATE 3-STATE 3-STATE
Exportable YES YES - YES - - YES YES YES
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP SOJ - DIP - - SOJ DIP SOJ
Encapsulate equivalent code DIP28,.3 SOJ28,.34 - DIP28,.3 - - SOJ28,.34 DIP28,.3 SOJ28,.34
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE - IN-LINE - - SMALL OUTLINE IN-LINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL - PARALLEL - - PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V - 5 V - - 5 V 5 V 5 V
Certification status Not Qualified Not Qualified - Not Qualified - - Not Qualified Not Qualified Not Qualified
Maximum seat height 4.4 mm 3.75 mm - 4.4 mm - - 3.75 mm 4.4 mm 3.75 mm
Maximum standby current 0.001 A 0.001 A - 0.001 A - - 0.001 A 0.001 A 0.001 A
Minimum standby current 4.5 V 4.5 V - 4.5 V - - 4.5 V 4.5 V 4.5 V
Maximum slew rate 0.09 mA 0.13 mA - 0.13 mA - - 0.09 mA 0.09 mA 0.09 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V - 5.5 V - - 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V - 4.5 V - - 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V - 5 V - - 5 V 5 V 5 V
surface mount NO YES - NO - - YES NO YES
technology CMOS CMOS - CMOS - - CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL - COMMERCIAL - - COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE J BEND - THROUGH-HOLE - - J BEND THROUGH-HOLE J BEND
Terminal pitch 2.54 mm 1.27 mm - 2.54 mm - - 1.27 mm 2.54 mm 1.27 mm
Terminal location DUAL DUAL - DUAL - - DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 7.62 mm 7.62 mm - 7.62 mm - - 7.62 mm 7.62 mm 7.62 mm
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