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ASI30304

Description
RF Small Signal Bipolar Transistor, 0.7A I(C), 1-Element, S Band, Silicon, NPN, FM-2
CategoryDiscrete semiconductor    The transistor   
File Size15KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric Compare View All

ASI30304 Overview

RF Small Signal Bipolar Transistor, 0.7A I(C), 1-Element, S Band, Silicon, NPN, FM-2

ASI30304 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionFLANGE MOUNT, O-CRFM-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionBASE
Maximum collector current (IC)0.7 A
Collector-based maximum capacity7.5 pF
ConfigurationSINGLE
highest frequency bandS BAND
JESD-30 codeO-CRFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
MSC3005
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
MSC3005
is Designed for Class
"C" Amplifier Applications up to 3 GHz.
PACKAGE STYLE .250 2L FLG
A
ØD
C
E
C
.060 x 45°
CHAMFER
FEATURES:
P
OUT
= 5.0 W Typ. at 3 GHz
Common Base
Configuration
Omnigold™
Metellization System
B
E
G
L
H
J
F
I
K
Base is connected to flange
M
NP
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
700 mA
30 V
17 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
8.5 C/W
O
O
O
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
MINIMUM
inches / mm
MAXIMUM
inches / mm
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.125 / 3.18
.110 / 2.79
.117 / 2.97
.560 / 14.22
.790 / 20.07
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.570 / 14.48
.810 / 20.57
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
ASI ORDER CODE: ASI30304
O
CHARACTERISTICS
SYMBOL
BV
CER
BV
CBO
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
I
C
= 5.0 mA
I
C
= 1.0 mA
I
E
= 1.0 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 28 V
T
C
= 25 C
NONE
TEST CONDITIONS
R
BE
= 10Ω
MINIMUM TYPICAL MAXIMUM
45
45
3.5
0.5
UNITS
V
V
V
mA
---
pF
dB
%
I
C
= 500 mA
f = 1.0 MHz
P
OUT
= 4.5 W
f = 3.0 GHz
20
120
7.5
4.5
30
5.0
35
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

ASI30304 Related Products

ASI30304
Description RF Small Signal Bipolar Transistor, 0.7A I(C), 1-Element, S Band, Silicon, NPN, FM-2
Maker Advanced Semiconductor, Inc.
package instruction FLANGE MOUNT, O-CRFM-F2
Contacts 2
Reach Compliance Code unknown
ECCN code EAR99
Shell connection BASE
Maximum collector current (IC) 0.7 A
Collector-based maximum capacity 7.5 pF
Configuration SINGLE
highest frequency band S BAND
JESD-30 code O-CRFM-F2
Number of components 1
Number of terminals 2
Maximum operating temperature 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED
Package shape ROUND
Package form FLANGE MOUNT
Polarity/channel type NPN
Certification status Not Qualified
surface mount NO
Terminal form FLAT
Terminal location RADIAL
transistor applications AMPLIFIER
Transistor component materials SILICON
Base Number Matches 1
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