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2N5330

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size105KB,1 Pages
ManufacturerTelCom Semiconductor, Inc. (Microchip Technology)
Websitehttp://www.telcom-semi.com/
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2N5330 Overview

Transistor,

2N5330 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)30 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)80 W
surface mountNO
Nominal transition frequency (fT)80 MHz
Base Number Matches1

2N5330 Related Products

2N5330 2N5329
Description Transistor, Transistor,
Reach Compliance Code unknown unknown
Maximum collector current (IC) 30 A 20 A
Configuration Single Single
Minimum DC current gain (hFE) 40 40
Maximum operating temperature 175 °C 175 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 80 W 65 W
surface mount NO NO
Nominal transition frequency (fT) 80 MHz 80 MHz
Base Number Matches 1 1

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