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20TT100

Description
Schottky (diodes and rectifiers) 20 amp 100 volt submicron trench
CategoryDiscrete semiconductor    diode   
File Size90KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

20TT100 Overview

Schottky (diodes and rectifiers) 20 amp 100 volt submicron trench

20TT100 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.67 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current900 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
20TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
FEATURES
Base
cathode
2
TO-220AC
1
Cathode
3
Anode
175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
RoHS
COMPLIANT
Optimized V
F
vs. I
R
trade off for high efficiency
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Full lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at 20 A at 125 °C
20 A
100 V
0.67 V
High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
20 Apk, T
J
= 125 °C (typical)
Range
CHARACTERISTICS
VALUES
100
0.63
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
20TT100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.5 A, L = 60 mH
Limited by frequency of operation and time pulse duration so
that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
See fig. 8
TEST CONDITIONS
50 % duty cycle at T
C
= 160 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
900
300
67.5
I
AS
at
T
J
max.
mJ
A
A
UNITS
Document Number: 94531
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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